| PART |
Description |
Maker |
| MS8151-P2613 |
GaAs Schottky Devices Low CT Flip Chip
|
Microsemi Corporation
|
| OH004 OH10004OH004 |
GaAs device - GaAs Hall Devices
|
Matsshita / Panasonic
|
| TCM851 |
The TCM850/1/2/3 combines an inverting charge pump and a low noise linear regulator in a single small outline package. They are ideal for biasing GaAS FETs in cellular telephone transmitter power amplifiers All four devices accept a range
|
Microchip
|
| HSCH-9102 HSCH-9151 HSCH-9101 HSCH-9251 |
HSCH-9251 · Beamlead GaAs Schottky barrier diodes
HSCH-9101 · Beamlead GaAs Schottky barrier diodes
GaAs Beam Lead Schottky Barrier Diodes
|
Agilent (Hewlett-Packard)
Agilent(Hewlett-Packard)
|
| NP0900SBMCT3G NP3500SCMCT3G NP2300SBMCT3G NP2600SB |
Low Cap TSPD Surge Devices - 80A 98 V, 30 A, SILICON SURGE PROTECTOR, DO-214AA
Low Cap TSPD Surge Devices 400 V, SILICON SURGE PROTECTOR, DO-214AA
Low Cap TSPD Surge Devices - 80A 260 V, 30 A, SILICON SURGE PROTECTOR, DO-214AA
Low Cap TSPD Surge Devices - 80A 300 V, 30 A, SILICON SURGE PROTECTOR, DO-214AA
Low Cap TSPD Surge Devices - 80A 130 V, 30 A, SILICON SURGE PROTECTOR, DO-214AA
Low Cap TSPD Surge Devices
|
ON Semiconductor
|
| MBR3535R MBR3540R |
High Power Schottky Rectifiers - DO4 Stud Devices
|
America Semiconductor
|
| 1N5832R 1N5833R |
High Power Schottky Rectifiers - DO5 Stud Devices
|
America Semiconductor
|
| 1N5829R |
High Power Schottky Rectifiers - DO4 Stud Devices
|
America Semiconductor
|
| 1N6095R 1N6096R |
High Power Schottky Rectifiers - DO4 Stud Devices
|
America Semiconductor
|
| MBRH24035 MBRH24020 |
High Power Schottky Rectifiers - Half Pak Devices
|
America Semiconductor
|
| 1N5817 1N5819 1N5818 ON0010 |
MDSTBV 2,5/ 3-G
SCHOTTKY BARRIER RECTIFIERS 1 AMPERE 20, 30 and 40 VOLTS
Motorola Preferred Devices
From old datasheet system
|
Motorola, Inc.
ON Semi
MOTOROLA[Motorola, Inc]
|
