| PART |
Description |
Maker |
| KM641001B |
256K x 4 Bit(with OE)High-Speed CMOS Static RAM(256K x 4 OE)高速CMOS 静RAM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| LY61L2568AML-10 LY61L2568AML-10I LY61L2568AML-10IT |
256K X 8 BIT HIGH SPEED CMOS SRAM
|
Lyontek Inc.
|
| LY61L25616GL-10LL LY61L25616GL-12LLET LY61L25616GL |
256K X 16 BIT HIGH SPEED CMOS SRAM
|
Lyontek Inc.
|
| LY61L25616 LY61L25616E LY61L25616GL LY61L25616GV L |
256K X 16 BIT HIGH SPEED CMOS SRAM
|
Lyontek Inc.
|
| LY6125616 LY6125616E LY6125616I LY6125616LL LY6125 |
5V 256K X 16 BIT HIGH SPEED CMOS SRAM
|
Lyontek Inc.
|
| BH616UV4010 |
Ultra Low Power/High Speed CMOS SRAM 256K X 16 bit
|
Brilliance Semiconductor
|
| 28C256ASC-1 28C256ASC-2 28C256ASC-3 28C256ASC-4 28 |
High speed 120 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
High speed 150 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
High speed 200 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
High speed 250 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns.
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns.
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns.
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns.
|
Turbo IC
|
| V53C8256H35 |
ULTRA-HIGH SPEED, 256K X 8 FAST PAGE MODE CMOS DYNAMIC RAM 超高速，256K × 8快速页面模式的CMOS动态随机存储器
|
Mosel Vitelic, Corp.
|
| K6R1004V1D |
256K x 4 Bit (with /OE) High-Speed CMOS Static RAM(3.3V Operating) Row Select Data Sheet
|
Samsung Electronic
|
| IS61C25616AL IS64C25616AL IS61C25616AL-10KI IS61C2 |
256K x 16 HIGH-SPEED CMOS STATIC RAM
256K X 16 STANDARD SRAM, 12 ns, PDSO44
256K x 16 HIGH-SPEED CMOS STATIC RAM
|
Integrated Silicon Solution, Inc
INTEGRATED SILICON SOLUTION INC
Integrated Silicon Solu...
|
| NM27C240 NM27C240QE120 |
4 Meg (256K x 16) High Performance CMOS EPROM [Life-time buy]
4,194,304-Bit (256k x 16) High Performance CMOS EPROM
4 /194 /304-Bit (256k x 16) High Performance CMOS EPROM
4,194,304位（256k × 16）高性能的CMOS存储
|
FAIRCHILD[Fairchild Semiconductor]
|
