| PART |
Description |
Maker |
| MID145-12A3 MII145-12A3 |
1200V IGBT module
IGBT Modules: Boost Configurated IGBT Modules
IGBT Modules - Short Circuit SOA Capability Square RBSOA 160 A, 1200 V, N-CHANNEL IGBT
|
IXYS Corporation
IXYS, Corp.
|
| CM150DU-12F |
IGBT MODULES HIGH POWER SWITCHING USE
150 A, 600 V, N-CHANNEL IGBT
|
Mitsubishi Electric Semiconductor
|
| 2ED300C17-ST |
Dual IGBT Driver Board For Infineon Medium and High Power IGBT Modules
|
Infineon Technologies AG
|
| TM25RZ-24 TM25RZ-2H TM25EZ-24 TM25EZ-2H TM25RZ/EZ- |
THYRISTOR MODULES HIGH POWER GENERAL USE INSULATED TYPE
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
|
Mitsubishi Electric Corporation
|
| VIO130-06P1 VII130-06P1 VDI130-06P1 VID130-06P1 IX |
IGBT Modules
From old datasheet system
IGBT Modules: Buck Configurated IGBT Modules
IGBT Modules: Boost Configurated IGBT Modules
|
IXYS[IXYS Corporation]
|
| CM100RX-24A CM100RX-24A09 |
IGBT MODULES HIGH POWER SWITCHING USE
|
Mitsubishi Electric Semiconductor
|
| CM600DY-24A09 |
IGBT MODULES HIGH POWER SWITCHING USE
|
Mitsubishi Electric Semiconductor
|
| CM100DY-24A09 |
IGBT MODULES HIGH POWER SWITCHING USE
|
Mitsubishi Electric Semiconductor
|
| CM600DU-24F |
IGBT MODULES HIGH POWER SWITCHING USE
|
Mitsubishi Electric Semiconductor
|
| CM150DY-24A |
IGBT MODULES HIGH POWER SWITCHING USE
|
Mitsubishi Electric Semiconductor
|
| CM200DY-24A |
IGBT MODULES HIGH POWER SWITCHING USE
|
Mitsubishi Electric Semiconductor
|
