| PART |
Description |
Maker |
| TSAL4400 |
GaAs/GaAlAs IR Emitting Diode in 3 mm (T.1) Package 砷化红外发光二极管的GaAIAs呢？3毫米（T.1）包
GaAs/GaAlAs IR Emitting Diode in ?3 mm (T.1) Package
From old datasheet system
GaAs/GaAlAs IR Emitting Diode in ? 3 mm (T?1)Package
GaAs/GaAlAs IR Emitting Diode in 3 mm (T.1) Package
GaAs/GaAlAs IR Emitting Diode in 庐3 mm (T.1) Package
GaAs/GaAlAs IR Emitting Diode in ?3 mm (T.1) Package
|
Vishay Intertechnology, Inc.
VISAY[Vishay Siliconix]
Vishay Telefunken
|
| BL-RUB139B |
CHIP MATERIAL:AIGAAS/GAAS
|
BRIGHT LED ELECTRONICS CORP
|
| TSAL6400 |
GaAs/GaAlAs IR Emitting Diode in 5 mm (T-1?) Package
|
Vishay
|
| TSAL4400 |
GaAs/GaAlAs IR Emitting Diode in 3 mm (T-1) Package
|
Vishay
|
| TSAL7600 |
GaAs/GaAlAs IR Emitting Diode in 5 mm (T-1?) Package
|
Vishay
|
| Q62703-Q1090 SFH483E7800 SFH483 |
GaAlAs-IR-Lumineszenzdiode GaAlAs Infrared Emitter 1 ELEMENT, INFRARED LED, 880 nm
GaAlAs-IR-Lumineszenzdiode GaAlAs Infrared Emitter 发动器，红外Lumineszenzdiode GaAlA红外发射
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| BA-3S12UW |
red chips, which are made from GaAlAs on GaAs substrate.
|
http://
Bright LED Electronics Corp.
|
| TSAL5300 |
GaAs/GaAlAs IR Emitting Diode in 5 mm (T-13/4) Package
From old datasheet system
|
Vishay Telefunken
|
| TSAL7600 TSAL760009 |
High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs
|
Vishay Siliconix
|
| TSAL5100 |
High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs
|
VISAY[Vishay Siliconix]
|
| VSML3710-GS08 VSML3710-GS18 VSML371008 VSML3710 |
High Power Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs/GaAs
|
Vishay Siliconix
|
