| PART |
Description |
Maker |
| BGA310 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 9 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz 3 dB-bandwidth: DC to 2.4 GHz)
|
Siemens Semiconductor Group
|
| Q62702-G0042 BGA312 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 11 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| BGA318 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 16 dB typical gain at 1.0 GHz 12 dBm typical P-1dB at 1.0 GHz)
|
Siemens Semiconductor Group
|
| TM008-055-08-23 |
0.8 - 5.5 GHz 23 dBm Gain Module
|
Transcom, Inc.
|
| PE71S2022 |
2.92mm SPDT PIN Diode Switch Operating From 2 GHz to 40 GHz Up To plus 27 dBm
|
Pasternack Enterprises,...
|
| TM020-060-11-32 |
2 ~ 6 GHz 32 dBm Module
|
Transcom, Inc.
|
| TA125-160-37-25 |
12.5 - 16 GHz 25 dBm Amplifier
|
Transcom, Inc.
|
| TA075-180-24-12 |
7.5 - 18 GHz 12 dBm Amplifier
|
Transcom, Inc.
|
| TM040-060-10-37 |
4 ~ 6 GHz 37 dBm Module
|
Transcom, Inc.
|
| TA020-060-36-34 |
2 - 6 GHz 33 dBm Amplifier
|
Transcom, Inc.
|
| TA085-110-30-38 |
8.5 - 11 GHz 38 dBm Amplifier
|
Transcom, Inc.
|
