| PART |
Description |
Maker |
| IRF130-133 IRF131 IRF132 IRF133 IRF532 IRF533 IRF5 |
N-Channel Power MOSFETs 20 A 60-100 V
N-Channel Power MOSFETs/ 20 A/ 60-100 V
CAP 220PF 200V 5% NP0(C0G) DIP-2 TUBE-PAK R-MIL-PRF-39014/22
N-Channel Power MOSFETs, 20 A, 60-100 V N沟道功率MOSFET0甲，60-100 V
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
Fairchild Semiconductor, Corp.
|
| SMBJ5V0 SMBJ7.0A SMBJ5.0A SMBJ6.0A SMBJ90A SMBJ100 |
DEVICES FOR BIPOLAR APPLICATIONS
600 Watt Transient Voltage Suppressor(Reverse Stand-off Voltage:17V)(600W瞬变电压抑制反向隔离电压17V 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA
600 Watt Transient Voltage Suppressor(Reverse Stand-off Voltage:9.0V)(600W瞬变电压抑制反向隔离电压9.0V 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA
600 Watt Transient Voltage Suppressor(Reverse Stand-off Voltage:8.0V)(600W瞬变电压抑制反向隔离电压8.0V 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA
600 Watt Transient Voltage Suppressor(Reverse Stand-off Voltage:7.5V)(600W瞬变电压抑制反向隔离电压7.5V
600 Watt Transient Voltage Suppressor(Reverse Stand-off Voltage:6.5V)(600W瞬变电压抑制反向隔离电压6.5V
600 Watt Transient Voltage Suppressor(Reverse Stand-off Voltage:6.0V)(600W瞬变电压抑制反向隔离电压6.0V
600 Watt Transient Voltage Suppressor(Reverse Stand-off Voltage:8.5V)(600W瞬变电压抑制反向隔离电压8.5V
600 Watt Transient Voltage Suppressor(Reverse Stand-off Voltage:22V)(600W瞬变电压抑制反向隔离电压2V
600 Watt Transient Voltage Suppressors
|
Fairchild Semiconductor, Corp.
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
http://
|
| MTY100N10E ON2707 Y100N10E |
TMOS POWER FET 100 AMPERES 100 VOLTS RDS(on) = 0.011 OHM 100 A, 100 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
From old datasheet system
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
|
| NTD6600N NTD6600N-1 NTD6600N-1G NTD6600NT4 NTD6600 |
Power MOSFET 100 V, 12 A, N−Channel, Logic Level DPAK
Power MOSFET 100 V, 12 A, N-Channel, Logic Level DPAK; Package: DPAK 4 LEAD Single Gauge Surface Mount; No of Pins: 4; Container: Tape and Reel; Qty per Container: 2500 12 A, 100 V, 0.146 ohm, N-CHANNEL, Si, POWER, MOSFET
|
ON Semiconductor
|
| FDT86113LZ |
100V N-Channel PowerTrenchMOSFET
N-Channel PowerTrench? MOSFET 100 V, 3.3 A, 100 m
N-Channel PowerTrench? MOSFET 100 V, 3.3 A, 100 m
|
Fairchild Semiconductor
|
| SI4482DY SI4482DY-T1 |
30V N-Channel PowerTrench MOSFET 30V的N沟道的PowerTrench MOSFET
N-Channel 100-V (D-S) MOSFET
N-Channel, 100-V Single
|
Vishay Intertechnology, Inc.
VISAY[Vishay Siliconix]
|
| PPF75N10N |
N Channel MOSFET; Package: TO-258; ID (A): 50; RDS(on) (Ohms): 0.025; PD (W): 300; BVDSS (V): 100; Rq: 0.42; 50 A, 100 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-258AA
|
Microsemi, Corp.
|
| ADG604 ADG604YRU ADG604YRUZ-REEL7 ADG604YRU-REEL A |
1 pC Charge Injection, 100 pA Leakage CMOS ±5 V/5 V/3 V 4-Channel Multiplexer
1 pC Charge Injection, 100 pA Leakage CMOS 卤5 V/5 V/3 V 4-Channel Multiplexer
IC,ANALOG MUX,QUAD,1-CHANNEL,CMOS,TSSOP,14PIN,PLASTIC
1 PC CHARGE INJECTION, 100 PA LEAKAGE CMOS 5 V/5 V/3 V 4-CHANNEL MULTIPLEXER
1pC Charge Injection, Low Leakage CMOS 4-Channel Multiplexer
|
Analog Devices, Inc.
adi
|
| FQD19N10 FQD17P06TF |
N-Channel QFET? MOSFET 100 V, 15.6 A, 100 mΩ
|
Fairchild Semiconductor
|
| SUM34N10-35 |
N-Channel 100-V (D-S) 175C MOSFET
N-Channel 100-V (D-S) 175C MOSFET
|
Vishay Intertechnology,Inc.
Vishay Siliconix
|
| TLE6250GV3 TLE6250C TLE6250CV33 TLE6250G TLE6250GV |
Stand alone - High Speed CAN Transceiver for 3.3V micro Controller (Bare Die)
Stand alone - High Speed CAN Transceiver (Bare Die)
CAN-Transceiver
|
INFINEON[Infineon Technologies AG]
|
|
