| PART |
Description |
Maker |
| STG3482QTR |
Low Voltage Dual SP4T Switch with Break-Before-Make Feat.
|
ST Microelectronics
|
| STG3684AUTR STG3684A STG3684ADTR |
Low voltage 0.5 Ω max dual SPDT switch with break-before-make
Low voltage 0.5 楼? max dual SPDT switch with break-before-make
Low voltage 0.5 ヘ max dual SPDT switch with break-before-make
|
STMicroelectronics
|
| MAX6720 MAX6720UTD-T MAX6729 MAX6717 MAX6722UTD-T |
Vcc1: 2.313 V, Vcc2: 1.110 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit
Vcc1: 1.665 V, Vcc2: 1.388 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit
Vcc1: 2.313 V, Vcc2: 1.388 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit
Vcc1: 2.188 V, Vcc2: 1.575 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit
Vcc1: 2.313 V, Vcc2: 1.665 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit
Dual/Triple Ultra-Low-Voltage SOT23 μP Supervisory Circuits
Dual/Triple Ultra-Low-Voltage SOT23 P Supervisory Circuits
Replaced by TPL9201 : Microcontroller Power Supply and Low-Side Driver 20-PDIP -40 to 125
Dual/Triple Ultra-Low-Voltage SOT23 レP Supervisory Circuits 三路、超低电压、SOT23封装、微处理器监控电
8-Bit Shift Register 16-PDIP -40 to 125 三路、超低电压、SOT23封装、微处理器监控电
Vcc1: 2.188 V, Vcc2: 0.788 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit
Vcc1: 2.625 V, Vcc2: 1.313 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit
Vcc1: 4.625 V,Vcc2: 3.075 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit
Vcc1: 4.375 V, Vcc2: 2.625 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit
Vcc1: 4.375 V,Vcc2: 2.925 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit
Vcc1: 2.625 V, Vcc2: 0.788 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit
Vcc1: 2.625 V, Vcc2: 1.575 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit
Vcc1: 2.625 V, Vcc2: 2.188 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit
Vcc1: 2.925 V, Vcc2: 0.788 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit
Vcc1: 2.925 V, Vcc2: 1.050 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit
Vcc1: 2.925 V, Vcc2: 1.313 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit
Vcc1: 2.925 V, Vcc2: 1.575 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit
Vcc1: 2.925 V, Vcc2: 2.188 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit
Vcc1: 3.075 V, Vcc2: 0.833 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit
Vcc1: 3.075 V, Vcc2: 1.110 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit
Vcc1: 3.075 V, Vcc2: 1.388 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit
Vcc1: 3.075 V, Vcc2: 1.665 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit
Vcc1: 3.075 V, Vcc2: 2.313 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit
Vcc1: 1.575 V, Vcc2: 0.788 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit
Vcc1: 1.575 V, Vcc2: 1.313 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit
Vcc1: 1.575 V, Vcc2: 1.050 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit
Vcc1: 1.665 V, Vcc2: 0.883 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit
Vcc1 4.625 V,Vcc2 3.075 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit
|
MAXIM[Maxim Integrated Products]
Maxim Integrated Products, Inc.
Maxim Integrated Produc...
MAXIM - Dallas Semiconductor
|
| STG3699B STG3699BVTR STG3699B07 |
Low voltage 0.5 Ω max, quad SPDT switch with break-before-make feature
Low voltage 0.5 ヘ max, quad SPDT switch with break-before-make feature
|
STMicroelectronics
|
| STG3699A_06 STG3699A STG3699AQTR STG3699AUTR STG36 |
LOW VOLTAGE 0.5Ω MAX QUAD SPDT SWITCH WITH BREAK-BEFORE-MAKE FEATURE
LOW VOLTAGE 0.5ヘ MAX QUAD SPDT SWITCH WITH BREAK-BEFORE-MAKE FEATURE
|
STMICROELECTRONICS[STMicroelectronics]
|
| OMH310 OMH315 |
DUAL, LOW VOLTAGE, LOW RDS(on), MOSFET H-BRIDGE CIRCUIT IN A PLASTIC PACKAGE
|
List of Unclassifed Manufacturers
List of Unclassifed Manufac...
|
| STG3690TTR STG3690 STG3690QTR |
LOW VOLTAGE 5ohm MAX QUAD SPDT SWITCH WITH BREAK BEFORE MAKE FEATURE
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| STG4160 STG4160BJR |
Low voltage 0.5 single SPDT switch with break-before-make feature and 15 kV contact ESD protection
|
STMicroelectronics
|
| PS7142-1C PS7142L-1C PS7142L-1C-E3 PS7142L-1C-E4 |
DUAL TRANSISTOR OUTPUT SOLID STATE RELAY, 1500 V ISOLATION-MAX
8-PIN DIP 400 V BREAK DOWN VOLTAGE TRANSFER TYPE 2-ch Optical Coupled MOS FET
Optical Coupled MOS FET Photocoupler(MOS 场效应管输出光光隔离器)
8-PIN DIP, 400 V BREAK DOWN VOLTAGE, TRANSFER TYPE 2-ch Optical Coupled MOS FET 8引脚DIP00伏电压分解，转移2型通道光学耦合场效应晶体管
|
NEC[NEC]
NEC Corp.
NEC, Corp.
|
| AN7315 |
Low Voltage Dual Pre-Amplifier Circuit
|
Matsushita Electric Works(Nais)
|
| PS720C-1A-F3 |
4-PIN SOP, 0.1 Ω LOW ON-STATE RESISTANCE 60 V BREAK DOWN VOLTAGE 1.25 A CONTINUOUS LOAD CURRENT 1-ch Optical Coupled MOS FET
|
NEC
|
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