| PART |
Description |
Maker |
| SSM5H08TU-14 |
Silicon N Channel MOS Type (U-MOS3)/Silicon Epitaxial Schottky Barrier Diode
|
Toshiba Semiconductor
|
| SSM5H14F |
Silicon N Channel MOS Type (U-MOS?/Silicon Epitaxial Schottky Barrier Diode
Silicon N Channel MOS Type (U-MOS楼虏)/Silicon Epitaxial Schottky Barrier Diode
|
Toshiba Semiconductor
|
| SSM5H11TU |
Silicon N Channel MOS Type (U-MOS3)/Silicon Epitaxial Schottky Barrier Diode
Multi-chip discrete device (N-ch SBD)
|
Toshiba Semiconductor
|
| SSM5H16TU |
Silicon N Channel MOS Type (U-MOS3)/Silicon Epitaxial Schottky Barrier Diode
Multi-chip discrete device (N-ch SBD)
|
Toshiba Semiconductor
|
| 1SS367 |
SILICON EPITAXIAL SCHOTTKY BARRIER DIODE
|
Shenzhen Ping Sheng Electronics Co., Ltd.
|
| DSR05S30U |
Diode Silicon Epitaxial Schottky Barrier Type
|
Toshiba Semiconductor
|
| SSM5H08TU |
Silicon Epitaxial Schottky Barrier Diode DC-DC Converter
|
Toshiba Semiconductor
|
| RB551V-30 |
SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE
|
SEMTECH ELECTRONICS LTD.
|
| RKD705WKKRP RKD705WKKRH |
Silicon Epitaxial Schottky Barrier Diode for Detector
|
Renesas Electronics Corporation
|
| HN20S01F |
Silicon Epitaxial Schottky Barrier Type Diode
|
Toshiba
|
| HN20S01FU |
Silicon Epitaxial Schottky Barrier Type Diode
|
Toshiba
|
