Part Number Hot Search : 
MBR1045C RFP15P06 UTX115 NDB410AE PJA3404 DTA114GF IZ1203SA ACT2804
Product Description
Full Text Search

AT28BV64B06 - 64K (8K x 8) Battery-Voltage Parallel EEPROM with Page Write and Software Data Protection

AT28BV64B06_4639286.PDF Datasheet


 Full text search : 64K (8K x 8) Battery-Voltage Parallel EEPROM with Page Write and Software Data Protection
 Product Description search : 64K (8K x 8) Battery-Voltage Parallel EEPROM with Page Write and Software Data Protection


 Related Part Number
PART Description Maker
AT28BV64-30PC AT28BV64-30JC AT28BV64-30JI 64K 8K x 8 Battery-Voltage CMOS E2PROM 8K X 8 EEPROM 3V, 300 ns, PDIP28
64K 8K x 8 Battery-Voltage CMOS E2PROM 8K X 8 EEPROM 3V, 300 ns, PQCC32
Atmel, Corp.
AT27BV1024 AT27BV1024-12JU AT27BV102407 AT27BV1024 1-Megabit (64K x 16) Unregulated Battery-Voltage High-Speed OTP EPROM
ATMEL Corporation
AT27BV512-15TI AT27BV512-15JI AT27BV512-90RC AT27B 512K 64K x 8 Unregulated Battery-Voltage High Speed OTP CMOS EPROM
Atmel
AT28LV64B DOC233 AT28LV64B-20JC AT28LV64B-20TC AT2 64K (8K x 8) Low Voltage CMOS
From old datasheet system
64K 8K x 8 Low Voltage CMOS E2PROM with Page Write and Software Data Protection
ATMEL[ATMEL Corporation]
IDT7187 IDT7187L IDT7187L25DB IDT7187L25L22B IDT71 CMOS STATIC RAM 64K (64K x 1-BIT) 64K X 1 STANDARD SRAM, 25 ns, CDIP22
Integrated Device Technology, Inc.
IDT[Integrated Device Technology]
GS820E32T-66 GS820E32T-100 GS820E32Q-150 GS820E32Q 138MHz 9.7ns 64K x 32 2M synchronous burst SRAM
150MHz 9ns 64K x 32 2M synchronous burst SRAM
64K X 32 CACHE SRAM, 11 ns, PQFP100
64K X 32 CACHE SRAM, 12 ns, PQFP100
64K X 32 CACHE SRAM, 10 ns, PQFP100
5.6UF/100VDC METAL POLY CAP 200万同步突发静态存储器
2M Synchronous Burst SRAM 200万同步突发静态存储器
Socket Adapter; For Use With:ATMEGA168-TQFP32, ATMEGA48-TQFP32, ATMEGA88-TQFP32, ATMEGA8L-TQFP32, ATMEGA8L(FAST)-TQFP32; Pitch Spacing:.8mm
64K x 32 / 2M Synchronous Burst SRAM
117MHz 11ns 64K x 32 2M synchronous burst SRAM
66MHz 18ns 64K x 32 2M synchronous burst SRAM
GSI Technology
Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
M27C1024-35C1 M27C1024-90C1 M27C1024-12C6 M27C1024 64K X 16 OTPROM, 100 ns, PDSO40
64K X 16 OTPROM, 100 ns, PQCC44
64K X 16 OTPROM, 100 ns, PDIP40
64K X 16 UVPROM, 100 ns, CDIP40
64K X 16 UVPROM, 45 ns, CDIP40
1 MBIT (64KB X16) UV EPROM AND OTP EPROM
STMICROELECTRONICS
ST Microelectronics
W27C520S-70 W27C520 W27C520W-90 W27C520S-90 W27C52 64K X 8 ELECTRICALLY ERASABLE EPROM 64K X 8 EEPROM 5V, 70 ns, PDSO20
BOX 2.53X1.73X.65 W/4 BTNS ALMOND 64K X 8 EEPROM 3V, 90 ns, PDSO20
From old datasheet system
Winbond Electronics, Corp.
Winbond Electronics Corp
WINBOND[Winbond]
AT49BV080 AT49LV080 AT49LV080T-12TC 8-Megabit Single 2.7-volt Battery-Voltage Flash Memory(8M位单电源2.7V Battery-Voltage技术闪速存储器)
x8 Flash EEPROM x8闪存EEPROM
Atmel Corp.
Atmel, Corp.
AT29BV010A 128K x 8 Single 2.7-volt Battery-Voltage Flash Memory(128K x 8单电.7V Battery-Voltage技术闪速存储器) 128K的8.7伏电池电压快闪记忆体28K的8单电源为2.7V电池电压技术闪速存储器
Atmel, Corp.
 
 Related keyword From Full Text Search System
AT28BV64B06 应用线路 AT28BV64B06 hot AT28BV64B06 watt AT28BV64B06 integrated circuit AT28BV64B06 Reset
AT28BV64B06 Band AT28BV64B06 技术资料下载 AT28BV64B06 datasheet | даташит AT28BV64B06 Gain AT28BV64B06 laser diode
 

 

Price & Availability of AT28BV64B06

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X
0.040089130401611