| PART |
Description |
Maker |
| TC58256DC TC58256FT |
256M Bit (32M×8Bits ) CMOS NAND EEPROM(32M×8位与非EEPROM) 256M比特2M的8位）的CMOS闪存EEPROM的（32M的8位与非的EEPROM
|
Toshiba Corporation
Toshiba, Corp.
|
| S29JL032H60TFI310 S29JL032H90TFI310 S29JL032H70TAI |
JT 3C 3#16 SKT PLUG 2M X 16 FLASH 3V PROM, 90 ns, PDSO48
JT 37C 37#22D PIN WALL RECP 2M X 16 FLASH 3V PROM, 70 ns, PDSO48
32M BIT CMOS 3.0V FLASH MEMORY 32兆位CMOS 3.0V闪存
32M BIT CMOS 3.0V FLASH MEMORY 2M X 16 FLASH 3V PROM, 60 ns, PDSO48
32M BIT CMOS 3.0V FLASH MEMORY 2M X 16 FLASH 3V PROM, 70 ns, PDSO48
|
Spansion Inc.
Advanced Micro Devices, Inc.
Spansion, Inc.
http://
|
| IBM13M32734BCA |
32M x 72 2-Bank Registered SDRAM Module(32M x 72 2组寄存同步动态RAM模块) 32M × 72配置2，银行注册内存模块（32M × 72配置2组寄存同步动态内存模块）
|
International Business Machines, Corp.
|
| KM23V32000CT KM23V32000CET |
32M-Bit (4Mx8 /2Mx16) CMOS Mask ROM(32M(4Mx8 /2Mx16) CMOS掩膜ROM) 32兆位Mx8 / 2Mx16）的CMOS掩模ROM2兆位Mx8 / 2Mx16）的CMOS掩膜光盘
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| KM23C32205BSG |
32M-Bit (2Mx16 /1Mx32) CMOS Mask ROM(32M(2Mx16 /1Mx32) CMOS掩膜ROM) 32兆位Mx16 / 1Mx32）的CMOS掩模ROM2兆位Mx16 / 1Mx32）的CMOS掩膜光盘
|
Samsung Semiconductor Co., Ltd.
|
| TC58NS256ADC |
256-MBIT (32M x 8 BITS) CMOS NAND E PROM (32M BYTE SmartMedia)
|
TOSHIBA
|
| TC58V32FT |
32M-Bit CMOS NAND EPROM
|
Toshiba Semiconductor
|
| KM23C32000 |
32M-Bit (2Mx16) CMOS Mask ROM
|
Samsung Semiconductor
|
| MX29LV033ATI-70 MX29LV033ATI-70G MX29LV033ATI-90 M |
32M-BIT [4M x 8] CMOS EQUAL SECTOR FLASH MEMORY
|
List of Unclassifed Manufacturers
|
| MX25L3235EZNI10G MX25L3235EM2I10G MX25L3235EMI10G |
32M-BIT [x 1/x 2/x 4] CMOS MXSMIO (SERIAL MULTI I/O) FLASH MEMORY
|
Macronix International
|
