| PART |
Description |
Maker |
| JXMBSG-T-3.5-01-C JXMBSG-T-3.5-02-C |
3.5GHz Cavity Diplexer
|
American Accurate Components, Inc.
|
| MAFLCC0003-TB MAFLCC0003-TR |
Low Cost SMT Dual Band Diplexer AMPS/PCS and GSM/DCS
|
M/A-COM Technology Solutions, Inc.
|
| MRF18085AL |
1805鈥?880 MHz, 85 W, 26 V GSM/GSM EDGE Lateral N鈥揅hannel RF Power MOSFETs
|
MOTOROLA
|
| MW4IC2020 MW4IC2020D MW4IC2020GMBR1 MW4IC2020MBR1 |
GSM/GSM EDGE, CDMA 1.805–1.99 GHz, 20 W, 26 V RF LDMOS Wideband Integrated Power Amplifier
MW4IC2020MBR1, MW4IC2020GMBR1 GSM/GSM EDGE, CDMA, 1805-1990 MHz, 20 W, 26 V RF LDMOS Wideband Integrated Power Amplifiers
RF LDMOS Wideband Integrated Power Amplifiers
|
Freescale (Motorola)
MOTOROLA[Motorola, Inc]
|
| MW4IC915MBR1 MW4IC915GMBR1 MW4IC915 |
MW4IC915MBR1. MW4IC915GMBR1 GSM/GSM EDGE. N-CDMA. W-CDMA. 860-960 MHz. 15 W. 26 V RF LDMOS Wideband Integrated Power Amplifiers MW4IC915MBR1MW4IC915GMBR1的GSM / GSM的EDGE网络 - CDMA技术。的W - CDMA860-960兆赫15日布什26最小输LDMOS的宽带集成功率放大器
|
飞思卡尔半导体(中国)有限公司
MOTOROLA[Motorola, Inc]
|
| MRF18085A MRF18085AR3 MRF18085ALSR3 |
The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs
MRF18085A, MRF18085AR3, MRF18085ALSR3 GSM/GSM EDGE, 1.8-1.88 GHz, 85 W, 26 V Lateral N-Channel RF Power MOSFETs
|
http://
MOTOROLA[Motorola, Inc]
|
| VTU6391A |
CW Coupled Cavity TWT
|
Communications & Power Industries, Inc.
|
| VTU5692C |
CW Coupled Cavity TWT
|
Communications & Power Industries, Inc.
|
| VTX5786J |
Pulsed Coupled Cavity TWT
|
Communications & Power Industries, Inc.
Communications & Power ...
|
| VTX5786E |
Pulsed Coupled Cavity TWT
|
Communications & Power Industries, Inc.
Communications & Power ...
|
| VTS5754F |
Pulsed Coupled Cavity TWT
|
Communications & Power Industries, Inc.
|
| VTS5754A |
Pulsed Coupled Cavity TWT
|
Communications & Power Industries, Inc.
|
