| PART |
Description |
Maker |
| IPP100N04S2-04 IPB100N04S2-04 SP0002-19061 SP0002- |
OptiMOSPower-Transistor 的OptiMOS㈢功率晶体管
OptiMOS? Power-Transistor
OptiMOS㈢ Power-Transistor
100 A, 40 V, 0.0036 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB GREEN, PLASTIC, TO-220, 3 PIN
|
Infineon Technologies AG
|
| UF2810P UF281OP |
RF MOSFET Power Transistor, 10W, 28V 100-500MHz
|
Tyco Electronics
|
| UF2805B |
RF MOSFET Power Transistor, 5W, 28V 100 - 500 MHz
|
Tyco Electronics
|
| BUK481-100A |
PowerMOS transistor 1 A, 100 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| NTD12N10-1G NTD12N10G |
Power MOSFET 12 Amps, 100 Volts; Package: DPAK-3 (SINGLE GAUGE); No of Pins: 4; Container: Rail; Qty per Container: 75 12 A, 100 V, 0.165 ohm, N-CHANNEL, Si, POWER, MOSFET
|
ON Semiconductor
|
| UF2815B |
RF Power MOSFET Transistor 15W, 100-500 MHz, 28V
|
M/A-COM Technology Solutions, Inc.
|
| UF2820R UF282OR |
RF MOSFET Power Transistor, 2OW, 28V 100 - 500 MHz
|
Tyco Electronics
|
| BUK452-100B BUK452-100A |
PowerMOS transistor 11 A, 100 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
NXP Semiconductors N.V.
Philips Semiconductors
|
| IRFB4710PBF IRFS4710PBF IRFSL4710PBF IRFS4710TRR I |
High frequency DC-DC converters
HEXFET㈢ Power MOSFET
HEXFET? Power MOSFET
75 A, 100 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET
|
International Rectifier
|
| HUF76633S3S HUF76633P3 HUF76633S3ST HUF76633S3STNL |
38A,100V, 0.036 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
38A, 100V, 0.036 Ohm, N-Channel, Logic Level UltraFETPower MOSFET
38A, 100V, 0.036 Ohm, N-Channel, Logic Level UltraFET Power MOSFET 39 A, 100 V, 0.037 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 39A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 100V的五（巴西）直| 39A条（丁）|63AB
38A, 100V, 0.036 Ohm, N-Channel, Logic Level UltraFET Power MOSFET 39 A, 100 V, 0.037 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
Intersil, Corp.
|
| NP100P06PDG-E2-AY NP100P06PDG NP100P06PDG-E1-AY |
100 A, 60 V, 0.0078 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB LEAD FREE, MP-25ZP, TO-263, 3 PIN
100 A, 60 V, 0.0078 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB MP-25ZP, TO-263, 3 PIN
MOS FIELD EFFECT TRANSISTOR
|
Cornell Dubilier Electronics, Inc.
Fujitsu, Ltd.
NEC[NEC]
|
| TIP112T MJE15028A BUT56AW BUT56AA BUT56AN MOTOROLA |
2 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-220AB
8 A, 120 V, NPN, Si, POWER TRANSISTOR, TO-220AB
8 A, 450 V, NPN, Si, POWER TRANSISTOR, TO-220AB
7 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB
10 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-220AB
5 A, 700 V, NPN, Si, POWER TRANSISTOR, TO-220AB
2.5 A, 750 V, NPN, Si, POWER TRANSISTOR, TO-220AB
3 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-220AB
6 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-220AB
10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB
1 A, 300 V, PNP, Si, POWER TRANSISTOR, TO-220AB
|
Motorola Mobility Holdings, Inc.
MOTOROLA INC
|
|
