| PART |
Description |
Maker |
| MT29F2G16AADWPDTR |
2Gb x8, x16: NAND Flash Memory
|
Micron Technology
|
| K9E2G08U0M K9E2G08U0M-F K9E2G08U0M-P K9E2G08U0M-V |
256M x 8 Bits NAND Flash Memory
|
Samsung Electronic
Samsung semiconductor
|
| K9W4G08U1M K9K2G16U0M K9W4G16U1M K9K2G08Q0M K9K2G0 |
256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K9K2G08U0M K9K2G08U0M-YCB0 K9K2G16U0M-PCB0 K9K2G16 |
256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| EBE20RE4AAFA-5C-E EBE20RE4AAFA EBE20RE4AAFA-4A-E |
2GB Registered DDR2 SDRAM DIMM (256M words x 72 bits, 1 Rank)
|
ELPIDA[Elpida Memory]
|
| EBD21RD4ADNA-7B EBD21RD4ADNA EBD21RD4ADNA-6B EBD21 |
2GB Registered DDR SDRAM DIMM (256M words X72 bits, 2 Ranks) 注册2GB的DDR SDRAM的内存（256M字X72位，2个等级）
|
Elpida Memory, Inc.
ELPIDA[Elpida Memory]
|
| TS24MP320 TS2GMP320 |
2G/4G x8 Flash Memory
2GB/4GB USB Flash Drive
|
Transcend Information. Inc.
|
| UPD23C256112AGY-XXX-MKH 23C256 UPD23C256112A UPD23 |
NAND INTERFACE 256M-BIT MASK-PROGRAMMABLE ROM
|
NEC[NEC]
|
| K9F1G08Q0M-PCB0 K9F1G08Q0M-PIB0 K9F1G08Q0M-YCB0 K9 |
128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
1Gb Gb 1.8V NAND Flash Errata
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| HY27UG164GDM-UPEB HY27UG084GDM-UPEB HY27UG164G2M-T |
256M X 16 FLASH 3.3V PROM, 30 ns, PBGA52 12 X 17 MM, 0.65 MM HEIGHT, LEAD FREE, ULGA-52
512M X 8 FLASH 3.3V PROM, 30 ns, PBGA52 12 X 17 MM, 0.65 MM HEIGHT, LEAD FREE, ULGA-52
256M X 16 FLASH 3.3V PROM, 30 ns, PDSO48
|
Hynix Semiconductor, Inc.
HYNIX SEMICONDUCTOR INC
|
