| PART |
Description |
Maker |
| H55S5162DFR-60M H55S5162DFR-75M H55S5162DFR-A3M |
512MBit MOBILE SDR SDRAMs based on 8M x 4Bank x16I/O
|
Hynix Semiconductor
|
| H55S5122DFR-60M H55S5122DFR-75M H55S5122DFR-A3M H5 |
512MBit MOBILE SDR SDRAMs based on 4M x 4Bank x32 I/O
|
Hynix Semiconductor
|
| HY5S5B6ELF-HE HY5S5B6ELF-SE HY5S5B6ELFP-HE HY5S5B6 |
256MBit MOBILE SDR SDRAMs based on 4M x 4Bank x16 I/O
|
Hynix Semiconductor
|
| C2299 |
PCS Base Stations, Land Mobile Radio, Cellular Telephony, Radio in the Local Loop
|
Electronic Theatre Controls, Inc.
VITESSE[Vitesse Semiconductor Corporation]
Vectron
|
| BD3532EFV BD3533F08 BD3533EKN BD3533F BD3533FVM BD |
Termination Regulators for DDR-SDRAMs
|
Rohm
|
| BD3532F BD3532F-E2 |
Termination Regulator for DDR-SDRAMs
|
ROHM
|
| BD3539FVM BD3539FVM10 BD3539NUX |
Termination Regulators for DDR-SDRAMs
|
Rohm
|
| K4S511632M K4S511632M-TC K4S511632M-TL1H K4S511632 |
512Mbit SDRAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K4J52324QC K4J52324QC-BJ14 K4J52324QC-BC14 K4J5232 |
512Mbit GDDR3 SDRAM
|
SAMSUNG[Samsung semiconductor]
|
| K4S510732B-TC1L K4S510732B-TC1H K4S510732B-TL1L K4 |
Stacked 512Mbit SDRAM 堆积512兆内
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| M390S2858DT1-C7C M390S2858DT1 M390S2858DT1-C7A |
128Mx72 SDRAM DIMM with PLL & Register based on Stacked 128Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD 128Mx72 SDRAM的内存与锁相
128Mx72 SDRAM DIMM with PLL & Register based on Stacked 128Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD Data Sheet
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| HYB25D512800AT-7F |
512Mbit Double Data Rate SDRAM
|
Infineon Technologies A...
|
