| PART |
Description |
Maker |
| ZMV831ATA ZMV831BTA ZV831 ZV831BV2TA ZMV832ATA ZMV |
SILICON 28V HYPERABRUPT VARACTOR DIODES
SILICON ION-IMPLANTED HYPERABRUPT TUNER DIODES 47 pF, 25 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
SILICON 28V HYPERABRUPT VARACTOR DIODES 8VHYPERABRUPT变容二极
25 Volt hyperabrupt varactor diode
SHELL, DSUB, 25, 90, BLK, POY, S (1011898)
SILICON 28V HYPERABRUPT VARACTOR DIODES 8.2 pF, 25 V, SILICON, VARIABLE CAPACITANCE DIODE
SILICON 28V HYPERABRUPT VARACTOR DIODES 8.2 pF, 25 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
SILICON 28V HYPERABRUPT VARACTOR DIODES UHF BAND, 47 pF, 25 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
BACKSHL, D-SUB, 9POS, MTL, NIPL, (914794) 22 pF, 25 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
28 V, silicon hyperabrupt varactor diode
SILICON ION-IMPLANTED HYPERABRUPT TUNER DIODES
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ZETEX[Zetex Semiconductors]
Zetex Semiconductor PLC
|
| Q62702-B403 BB620 |
From old datasheet system
Silicon Variable Capacitance Diode (For Hyperband TV/VTR tuners / Bd I)
Silicon Variable Capacitance Diode (For Hyperband TV/VTR tuners, Bd I) 硅变容二极管（对于Hyperband电视/录像机调谐器，屋宇署一
Silicon Variable Capacitance Diode (For Hyperband TV/VTR tuners, Bd I) 30 V, SILICON, VARIABLE CAPACITANCE DIODE
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SIEMENS[Siemens Semiconductor Group]
Siemens Group
SIEMENS AG
|
| ZC831 ZC831A ZC831B ZC830 ZC830A ZC830B ZC836B ZC8 |
SOT23 SILICON VARIABLE CAPACITANCE DIODES
25 Volt hyperabrupt varactor diode
MS (MIL-C-5015)/97 SERIES 3108A SOLID SHELL ANGLE PLUGS, RIGHT ANGLE BODY STYLE, SOLDER TERMINATION, 22 SHELL SIZE, 22-2 INSERT ARRANGEMENT, PLUG GENDER, 3 CONTACTS 47 pF, 25 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
10 pF, 25 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
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ZETEX[Zetex Semiconductors]
Zetex Semiconductor PLC
DIODES INC
|
| BB804 |
Silicon Variable Capacitance Diode (For FM tuners Monolithic chip with common cathode for perfect tracking of both diodes) 18 V, SILICON, VARIABLE CAPACITANCE DIODE
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SIEMENS AG
Siemens Semiconductor Group
|
| 12065G473Z-MR 06033G104Z-MR 0805YG105Z-MR 1206YG22 |
CAP. 47NF MINIREEL 500PCS
CAP. 0.1UF MINIREEL 500PCS
CAP. 1UF MINIREEL 500PCS
CAP. 2.2UF MINIREEL 500PCS
CAP. 10UF MINIREEL 500PCS
CAP. 220NF MINIREEL 500PCS
CAP. 1000NF MINIREEL 500PCS
第470NF MINIREEL 500
CAP. 10NF MINIREEL 500PCS 第10NF MINIREEL 500
CAP. 100NF MINIREEL 500PCS
|
Diodes, Inc.
|
| SLOTTEN-4-17 SLOTTEN-2-17 SLOTTEN-3-17 SLOTTEN-5-1 |
SHIELDED, 288 uH - 432 uH, VARIABLE INDUCTOR DIP-5
UNSHIELDED, 286 uH - 630 uH, VARIABLE INDUCTOR DIP-5
SHIELDED, 230 uH - 310 uH, VARIABLE INDUCTOR DIP-5
SHIELDED, 72 uH - 163 uH, VARIABLE INDUCTOR DIP-5
SHIELDED, 303 uH - 765 uH, VARIABLE INDUCTOR DIP-5
UNSHIELDED, 66 uH - 136 uH, VARIABLE INDUCTOR DIP-5
UNSHIELDED, 67.2 uH - 100.2 uH, VARIABLE INDUCTOR DIP-5
SHIELDED, 52.7 uH - 71.3 uH, VARIABLE INDUCTOR DIP-5
SHIELDED, 67.2 uH - 100.8 uH, VARIABLE INDUCTOR DIP-5
UNSHIELDED, 280 uH - 432 uH, VARIABLE INDUCTOR DIP-5
UNSHIELDED, 1.76 uH - 2.64 uH, VARIABLE INDUCTOR DIP-5
UNSHIELDED, 1.2 uH - 1.8 uH, VARIABLE INDUCTOR DIP-5
UNSHIELDED, 2.4 uH - 5.4 uH, VARIABLE INDUCTOR DIP-5
UNSHIELDED, 1.25 uH - 2.75 uH, VARIABLE INDUCTOR DIP-5
SHIELDED, 2.9 uH - 3.9 uH, VARIABLE INDUCTOR DIP-5
SHIELDED, 18.7 uH - 25.3 uH, VARIABLE INDUCTOR DIP-5
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Coilcraft, Inc.
|
| HVC362TRF-E HVC317BTRF HVU200ATRU HVC358BTRF-E |
15 V, SILICON, VARIABLE CAPACITANCE DIODE
30 V, SILICON, VARIABLE CAPACITANCE DIODE
VHF BAND, 32 V, SILICON, VARIABLE CAPACITANCE DIODE
|
|
| 1T362 |
Silicon Variable Capacitance Diode Designed For Electronic Tuning Of TV Tuner(硅可变电容二极管（用于电视调谐器的电子调谐）) 硅变容二极管设计电子调谐电视调谐器（硅可变电容二极管（用于电视调谐器的电子调谐）
Silicon Variable Capacitance Diode
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Sony, Corp.
Sony Corporation
|
| 1SV257 |
RF Varactor Diodes
Variable Capacitance Diode Silicon Epitaxial Planar Type(变容硅外延平面型二极管（用于UHF波段无线电台
Variable Capacitance Diode Silicon Epitaxial Planar Type VCO For UHF Ratio
|
Toshiba Corporation
Toshiba Semiconductor
|
| V27D V27BCO V27CCO V27E V27ECCO V27ACO V27EACO V12 |
27 pF, 22 V, SILICON, VARIABLE CAPACITANCE DIODE
27 pF, 72 V, SILICON, VARIABLE CAPACITANCE DIODE
12 pF, 110 V, SILICON, VARIABLE CAPACITANCE DIODE
10 pF, 70 V, SILICON, VARIABLE CAPACITANCE DIODE
|
|
| BB145_2 BB145 BB145T/R BB145115 |
6.9 pF, 6 V, SILICON, VARIABLE CAPACITANCE DIODE
Low-voltage variable capacitance diode
From old datasheet system
|
NXP Semiconductors
Philipss
|
| 1N4795A 1N4811A 1N4811B 1N4815 1N4797B |
39 pF, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
47 pF, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
100 pF, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-14
56 pF, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
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