| PART |
Description |
Maker |
| H5MS1222EFP-L3E H5MS1222EFP-L3M H5MS1222EFP-J3E H5 |
128Mbit MOBILE DDR SDRAM based on 1M x 4Bank x32 I/O
4M X 32 DDR DRAM, PBGA90
|
HYNIX SEMICONDUCTOR INC
|
| M368L1713CTL-LB3 M368L1713CTL M368L1713CTL-CA2 M36 |
128MB DDR SDRAM MODULE (16Mx64 based on 16Mx8 DDR SDRAM) Unbuffered 184pin DIMM 64-bit Non-ECC/Parity
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
|
| M368L3313DTL-CB0 M368L3313DTL-CB3 M368L3313DTL-CA2 |
256MB DDR SDRAM MODULE (32Mx64(16Mx64*2 bank) based on 16Mx8 DDR SDRAM)
|
Samsung semiconductor
|
| MT46H8M16LF |
Mobile Double Data Rate (DDR) SDRAM 移动双倍数据速率（DDR）SDRAM内存
|
Micron Technology, Inc.
|
| HY5DU56822AF HY5DU56422AF-J HY5DU561622AF HY5DU564 |
32M X 8 DDR DRAM, 0.7 ns, PBGA60
DDR SDRAM - 256Mb
64Mx4|2.5V|8K|J/M/K/H/L|DDR SDRAM - 256M
16Mx16|2.5V|8K|J/M/K/H/L|DDR SDRAM - 256M
|
HYNIX SEMICONDUCTOR INC
|
| HDD128M72D18RPW-13A HDD128M72D18RPW-16B HDD128M72D |
DDR SDRAM Module 1024Mbyte (128Mx72bit), based on 64Mx8, 4Banks, 8K Ref., 184Pin-DIMM with PLL & Register
DDR SDRAM Module 1024Mbyte (128Mx72bit), based on 64Mx8, 4Banks, 8K Ref., 184Pin-DIMM with PLL & Register DDR SDRAM内存模块1024Mbyte28Mx72bit），4Mx8BanksK的参考依据。，184Pin与锁相环内存
|
Hanbit Electronics Co.,Ltd.
Hanbit Electronics Co., Ltd.
|
| K4X56323PG K4X56323PG-7EC3 K4X56323PG-7ECA K4X5632 |
8M X32 MOBILE-DDR SDRAM
|
SAMSUNG[Samsung semiconductor]
|
| K4X51163PE-L |
32Mx16 Mobile DDR SDRAM
|
Samsung semiconductor
|
| HY5MS7B2BLF |
Mobile DDR SDRAM 512M
|
Hynix
|
| EMD56324P-60 EMD56324P-75 EMD56324P |
256M: 8M x 32 Mobile DDR SDRAM
|
Emerging Memory & Logic Solutions Inc
|
| H5MS5162DFR-K3M H5MS5162DFR-E3M H5MS5162DFR-J3M H5 |
512Mb (32Mx16bit) Mobile DDR SDRAM
|
Hynix Semiconductor
|
| H5MS2622JFR H5MS2532JFR |
256Mb (8Mx32bit) Mobile DDR SDRAM
|
Hynix Semiconductor
http://
|
