| PART |
Description |
Maker |
| 2SK3117 |
N CHANNEL MOS TYPE (LOW NOISE PRE-AMPLIFIER, TONE CONTROL AMPLIFIER AND DC-AC HIGH INPUT IMPEDANCE AMPLIFIER CIRCUIT APPLICATIONS)
|
Toshiba Corporation
Toshiba Semiconductor
|
| BA3518F-T1 BA3528FP-T1 BA3506AFT1 BA3506AFE1 BA350 |
0.031 W, 2 CHANNEL, AUDIO AMPLIFIER, PDSO16 SOP-16
0.034 W, 2 CHANNEL, AUDIO AMPLIFIER, PDSO28 HSOP-28
0.069 W, 2 CHANNEL, AUDIO AMPLIFIER, PDSO18
0.04 W, 2 CHANNEL, AUDIO AMPLIFIER, PDSO18
5.4 W, 2 CHANNEL, AUDIO AMPLIFIER, PSFM12
5.2 W, 2 CHANNEL, AUDIO AMPLIFIER, PSFM10
|
Intel, Corp.
|
| 2SK30ATM |
Field Effect Transistor Silicon N Channel Junction Type Low Noise Pre-Amplifier, Tone Control Amplifier and DC-AC High Input Impedance Amplifier Circuit Applications
|
TOSHIBA
|
| 2SA1932 |
POWER AMPLIFIER APPLICATIONS DRIBVER STAGE AMPLIFIER APPLICATIONS
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) POWER AMPLIFIER AND DRIVER STAGE AMPLIFIER APPLICATIONS
|
Toshiba Semiconductor
|
| BA3306 A5800528 |
Audio LSIs > Pre amplifier/Line amplifier > Pre amplifier
Dual preamplifier with ALC
From old datasheet system
|
ROHM[Rohm]
|
| AA028P2-99 |
25000 MHz - 31000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
25-31 GHz Amplifier
251 GHz Amplifier
|
SKYWORKS SOLUTIONS INC
Alpha Industries, Inc.
Alpha Industries Inc
|
| GC509 GC509-CHIP GC509-MCRO |
AUDIO AMPLIFIER, PDSO10
GC509 - Class A Amplifier with 3 Independent Gain Blocks GC509 - A类放大器3独立增益模块
AUDIO AMPLIFIER, UUC10
|
GENNUM[Gennum Corporation]
Samsung Semiconductor Co., Ltd.
|
| LT1167ACN8 LT1167ACS8 LT1167CN8 LT1167CS8 LT1167IN |
Single Resistor Gain Programmable/ Precision Instrumentation Amplifier
Precision Instrumentation Amplifier INSTRUMENTATION AMPLIFIER, 100 uV OFFSET-MAX, 1 MHz BAND WIDTH, PDSO8
TRANS NPN 100VCEO .5A TO-126
|
Linear Technology, Corp.
Linear Technology Corporation
|
| RFS1006 PRFS-1006-0007 PRFS-1006-0008 PRFS-1006-00 |
3.4-3.6 GHz Power Amplifier 3400 MHz - 3600 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
3.4-3.6 GHz Power Amplifier 3号至三月六日GHz功率放大
Single-band power amplifiers
The RFS1006 power amplifier is a high-power, high-performance GaAs MESFET IC designed for use in a transmit applications in the 3.4-3.6 ...
|
ANADIGICS, Inc.
ANADIGICS[ANADIGICS, Inc]
ANADIGICS[ANADIGICS Inc]
|
| BGD902MI BGD902 |
CATV amplifier modules 40 MHz - 900 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER
860 MHz, 18.5 dB gain power doubler amplifier
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| RF3330 RF3330PCBA |
IF GAIN CONTROLLED AMPLIFIER 中频增益控制放大
IF GAIN CONTROLLED AMPLIFIER RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
|
RF Micro Devices, Inc.
RFMD[RF Micro Devices]
|
| CPH5901 |
High-Frequency Amplifier. AM Amplifier. Low-Frequency Amplifier Applications
|
Sanyo Semicon Device
|
