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NANOSMDC016F - PolySwitch?PTC Devices PolySwitch垄莽PTC Devices

NANOSMDC016F_4565159.PDF Datasheet


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W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
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GAL22V10D-25LJNI LATTICESEMICONDUCTORCORP-GAL22V10 EE PLD, 25 ns, PQCC28 LEAD FREE, PLASTIC, LCC-28
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