| PART |
Description |
Maker |
| LY62W256 LY62W256E LY62W256I LY62W256PL LY62W256PV |
32K X 8 BIT LOW POWER CMOS SRAM
|
Lyontek Inc.
|
| GM76U256CLT |
32K x8 bit 3.0V Low Power CMOS slow SRAM
|
Hynix Semiconductor
|
| GM76U256CLLT |
32K x8 bit 3.0V Low Power CMOS slow SRAM
|
Hynix Semiconductor
|
| BS62UV256TI BS62UV256 BS62UV256DC BS62UV256DI BS62 |
Ultra Low Power/Voltage CMOS SRAM 32K X 8 bit 超低功率/电压CMOS SRAM2K的8
|
BRILLIANCE SEMICONDUCTOR, INC.
BSI[Brilliance Semiconductor]
|
| M5M5256DFP-70G M5M5256DFP-70GI M5M5256DVP-70G M5M5 |
32K X 8 STANDARD SRAM, 70 ns, PDSO28
262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM
Memory>Low Power SRAM
|
Renesas Electronics Corporation
|
| 28LV256SI-3 28LV256SI-4 28LV256SI-5 28LV256SI-6 28 |
Speed: 200 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Speed: 250 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Speed: 300 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Speed: 400 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns.
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns.
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns.
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns.
|
Turbo IC
|
| UPD43257BGU-70L UPD43257BGU-70LL UPD43257BGU-85L U |
32K X 8 STANDARD SRAM, 70 ns, PDSO28
MOS INTEGRATED CIRCUIT 256K-BIT CMOS STATIC RAM 32K-WORD BY 8-BIT
|
NEC
|
| K6T1008C2C K6T1008C2C-RB55 K6T1008C2C-RB70 K6T1008 |
128K X 8 STANDARD SRAM, 70 ns, PDSO32
128K x8 bit Low Power CMOS Static RAM 128K的x8位低功CMOS静态RAM
128K x8 bit Low Power CMOS Static RAM 128K的x8位低功耗CMOS静态RAM
55/70ns; V(cc): 4.5 to 5.5V; 128 x 8-bit low power CMOS static RAM
55ns; 128 x 8-bit low power CMOS static RAM
70ns; 128 x 8-bit low power CMOS static RAM
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
|
| P87C58X2FA P87C52 P87C54 80C52 80C52X2 P80C31X2 P8 |
80C51 8-bit microcontroller family 4K/8K/16K/32K ROM/OTP 128B/256B RAM low voltage 2.7 to 5.5 V, low power, high speed 30/33 MHz 8-BIT, MROM, 33 MHz, MICROCONTROLLER, PQFP44
80C51 8-bit microcontroller family 4K/8K/16K/32K ROM/OTP 128B/256B RAM low voltage 2.7 to 5.5 V, low power, high speed 30/33 MHz 80C51位单片机系列4K/8K/16K/32K的ROM / RAM的检察官办公28B/256B低电.7.5 V，低功耗，高33分之30兆赫
80C51 8-bit microcontroller family 4K-8K-16K-32K ROM-OTP 128B-256B RAM low voltage (2.7 to 5.5 V), low power, high speed (30-33 MHz)
|
存储
NXP Semiconductors N.V.
|
| T15V256A03 |
32K X 8 LOW POWER CMOS STATIC RAM
|
Taiwan Memory Technology
|
| IS65C256AL-25UA3 IS65C256AL-25TLA3 IS65C256AL-25UL |
32K x 8 LOW POWER CMOS STATIC RAM
|
Integrated Silicon Solution, Inc.
|
| IS62C256AL IS62C256AL-45TI IS62C256AL-45TL IS62C25 |
32K X 8 LOW POWER CMOS STATIC RAM
|
ISSI[Integrated Silicon Solution, Inc]
|
