| PART |
Description |
Maker |
| H57V1262GTR-50X H57V1262GTR-60X H57V1262GTR-70X H5 |
128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O
8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
8M X 16 SYNCHRONOUS DRAM, 4.5 ns, PDSO54
|
HYNIX SEMICONDUCTOR INC
|
| NT128S64V88C0G-75B NT128S64V88C0G-7K NT128S64V88C0 |
128Mb unbuffered SDRAM module based on 16Mx8, 4banks, 4K refresh, 3.3V synchronous DRAM with SPD
|
NANYA
|
| K4S281632F-UC75 K4S280432F-UC K4S280832F-UC75 K4S2 |
8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
32M X 4 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
128Mb F-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant) 128Mb的的F -模与铅SDRAM的规4 TSOP-II免费（符合RoHS
CAP 0.1UF 100V 10% X7R SMD-1206 TR-7-PL 3K/REEL
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| HY5V66EF6 HY5V66EF6-5 HY5V66EF6-6 HY5V66EF6-7 HY5V |
64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O 4M X 16 SYNCHRONOUS DRAM, 5.5 ns, PBGA60
|
Hynix Semiconductor, Inc.
HYNIX[Hynix Semiconductor]
|
| HY57V641620ET-7 HY57V641620ESTP-H HY57V641620ET-H |
64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O 4M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
|
Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
|
| EM48AM3244VBA-6FE EM488M3244VBA-6FE EM488M3244VBA- |
128Mb (1M×4Bank×32) Synchronous DRAM
128Mb (1M?4Bank?32) Synchronous DRAM
128Mb (1M】4Bank】32) Synchronous DRAM
|
http://
Eorex Corporation
|
| IS42S16800E-6BLI IS42S16800E-6TL IS42S81600E IS42S |
16M x 8, 8M x16 128Mb SYNCHRONOUS DRAM
|
Integrated Silicon Solution, Inc
|
| KM416S8030BN-G_FL KM416S8030BN KM416S8030BN-G_FH K |
128Mb SDRAM Shrink TSOP 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
|
SAMSUNG[Samsung semiconductor]
|
| H57V2562GTR-50I H57V2562GTR-50J H57V2562GTR-60I H5 |
256Mb Synchronous DRAM based on 4M x 4Bank x16 I/O
|
Hynix Semiconductor
|
| H57V2562GFR |
256Mb Synchronous DRAM based on 4M x 4Bank x16 I/O
|
Hynix Semiconductor
|
