| PART |
Description |
Maker |
| A0837 BC876 |
PNP Silicon Darlington Transistors (High current gain High collector current)
From old datasheet system
|
Siemens
Infineon
|
| BC637 |
NPN Silicon AF Transistors (High current gain High collector current)
|
Siemens Semiconductor G...
|
| 2SB1183 2SB1239 |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W)
Darlington connection for high DC current gain.
|
ROHM[Rohm]
|
| CPH3223 CPH3123 |
Low-Saturation Voltage Transistors
PNP / NPN EPITAXIAL PLANAR SILICON TRANSISTORS HIGH-CURRENT SWITCHING APPLICATIONS
|
Sanyo Semicon Device
|
| 2N6496 2N5039 2N5038 |
HIGH-CURRENT, HIGH-POWER HIGH-SPEED SILICON N-P-N PLANAR TRANSISTORS
|
GESS[GE Solid State]
|
| 2N6032 2N6033 |
HIGH CURRENT HIGH SPEED HIGH POWER TRANSISTORS
|
ETC
GESS[GE Solid State]
|
| 2N6033 |
HIGH-CURRENT, HIGH-SPEED, HIGH-POWER TRANSISTORS
|
New Jersey Semi-Conductor Products, Inc.
|
| BUW49 BUW48 4206 |
HIGH CURRENT NPN SILICON TRANSISTORS
HIGH POWER NPN SILICON TRANSISTORS
From old datasheet system
|
ST Microelectronics
STMicroelectronics
|
| 2SD1816 2SB1216 0745 2SB12161 |
PNP/NPN Epitaxial Planar Silicon Transistors
From old datasheet system
PNP Epitaxial Planar Silicon Transistors High-Current Switching Applications
NPN Epitaxial Planar Silicon Transistors High-Current Switching Applications
|
Sanyo Semicon Device
|
| MJ11028-D |
High-Current Complementary Silicon Transistors
|
ON Semiconductor
|
| MJ1101201 MJ11016 MJ11012 MJ11015 MJ11012-D |
HIGH-CURRENT COMPLEMENTARY SILICON TRANSISTORS
|
ONSEMI[ON Semiconductor]
|
