| PART |
Description |
Maker |
| TPCP8H01 |
TOSHIBA Multi-Chip Transistor Silicon NPN Epitaxial Type, Field Effect Transistor Silicon N Channel MOS Type
|
Toshiba Semiconductor
|
| TH50VPN564 TH50VPN5640EBSB |
MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS PSEUDO SRAM AND NAND E2PROM MEMORY MIXED MULTI-CHIP PACKAGE
|
TOSHIBA
|
| CP611 |
Power Transistor PNP - Amp / Switch Transistor Chip
Chip Form: SILICON TRANSISTOR
|
Central Semiconductor Corp
|
| MMDT4401 |
Multi-Chip Transistor
|
SeCoS Halbleitertechnologie GmbH
|
| CP617 |
Small Signal Transistor PNP - Silicon RF Transistor Chip
Chip Form: RF TRANSISTOR
|
Central Semiconductor Corp
|
| BC847S |
Multi-Chip TRANSISTOR (NPN)
|
SHENZHEN YONGERJIA INDUSTRY CO.,LTD
|
| SSM5H16TU |
Silicon N Channel MOS Type (U-MOS3)/Silicon Epitaxial Schottky Barrier Diode
Multi-chip discrete device (N-ch SBD)
|
Toshiba Semiconductor
|
| UMH15N |
NPN Multi-Chip Built-in Resistors Transistor
|
SeCoS Halbleitertechnologie GmbH
|
| UMD2N |
NPN-PNP built-in resistors Multi-Chip Digital Transistor
|
SeCoS
|
| CMLM2205 |
MULTI DISCRETE MODULE SURFACE MOUNT SILICON SWITCHING NPN TRANSISTOR AND LOW VF SILICON SCHOTTKY DIODE
MULTI DISCRETE MODULE⑩ SURFACE MOUNT SILICON SWITCHING NPN TRANSISTOR AND LOW VF SILICON SCHOTTKY DIODE
MULTI DISCRETE MODULE??SURFACE MOUNT SILICON SWITCHING NPN TRANSISTOR AND LOW VF SILICON SCHOTTKY DIODE
|
CENTRAL[Central Semiconductor Corp]
|
| BUX1209 |
SILICON MULTI-EPITAXIAL NPN TRANSISTOR
|
Seme LAB
|
| BUP53 |
SILICON MULTI-EPITAXIAL NPN TRANSISTOR
|
Seme LAB
|
