| PART |
Description |
Maker |
| HGTP10N120BN HGTG10N120BN HGT1S10N120BNS HGT1S10N1 |
1200V, NPT Series N-Channel IGBT; Package: TO-263(D2PAK); No of Pins: 2; Container: Tape & Reel 35 A, 1200 V, N-CHANNEL IGBT, TO-263AB
35A/ 1200V/ NPT Series N-Channel IGBT
35A, 1200V, NPT Series N-Channel IGBT
35 A, 1200 V, NPT N-Channel IGBT
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| DIM200WBS12-A000 |
Single Switch IGBT Module 200 A, 1200 V, N-CHANNEL IGBT
|
Dynex Semiconductor, Ltd.
|
| DIM200WHS12-E000 |
Half Bridge IGBT Module 200 A, 1200 V, N-CHANNEL IGBT
|
Dynex Semiconductor, Ltd.
|
| FS150R12KE3G |
200 A, 1200 V, N-CHANNEL IGBT
|
INFINEON TECHNOLOGIES AG
|
| DIM200MKS12-A000 |
200 A, 1200 V, N-CHANNEL IGBT
|
DYNEX SEMICONDUCTOR LTD
|
| MG50Q2YS9 MG100M2CK1 MG200H2CK1 GT60M103 MG400H1FK |
50 A, 1200 V, N-CHANNEL IGBT
100 A, 880 V, 2 CHANNEL, NPN, Si, POWER TRANSISTOR
200 A, 550 V, 2 CHANNEL, NPN, Si, POWER TRANSISTOR
150 A, 550 V, 2 CHANNEL, NPN, Si, POWER TRANSISTOR
400 A, 600 V, N-CHANNEL IGBT
|
|
| SFF9240M |
-11 AMP -200 VOLTS 0.50 ohm P-Channel Power MOSFET 11 A, 200 V, 0.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-254
|
Solid State Devices, Inc.
|
| SFF240M |
18 AMP 200 Volts 0.18 OHM N-Channel POWER MOSFET
|
Solid States Devices, Inc.
|
| SFF230M |
9 AMP 200 Volts 0.40OHM N-Channel POWER MOSFET
|
Solid States Devices, Inc.
|
| SFF9240C |
-11 AMP -200 VOLTS 0.50 ohm P-Channel Power MOSFET
|
SSDI[Solid States Devices, Inc]
|
| SFF9230M |
-6.5 AMP -200 VOLTS 0.80 ohm P-Channel Power MOSFET
|
SSDI[Solid States Devices, Inc]
|
|
