| PART |
Description |
Maker |
| BDX84A BDX54 BDX54A BDX54B |
DARLINGTON COPLEMENTARY SILICON POWER TRANSISTORS
Trans Darlington PNP 60V 8A 3-Pin(3 Tab) TO-220
|
New Jersey Semi-Conductor P...
New Jersey Semiconductors
New Jersey Semi-Conduct...
|
| TIP142 TIP147 TIP146 TIP145 TIP141 TIP140 4132 |
Complemetary Silicon Power Darlington Transistors(浜?ˉ纭????揪??】?朵?绠?
From old datasheet system
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
|
STMicro
|
| 2SD916 |
Trans Darlington NPN 60V 7A 3-Pin(3 Tab) TO-220AB
|
New Jersey Semiconductors
|
| MJE5742 MJE5740 MJE5740-D |
Power 8A 400V Darlington NPN
Power 8A 300V Darlington NPN
NPN Silicon Power Darlington Transistors
|
ON Semiconductor
|
| CZT122 CZT127 |
SMD Bipolar Power Transistor PNP Darlington
SMD Bipolar Power Transistor NPN Darlington
SURFACE MOUNT COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTOR
|
Central Semiconductor Corp
|
| BD778 BD776 BD777 |
Plastic Darlington Complementary Silicon Power Transistors
DARLINGTON 4-AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 45/ 60/ 80 VOLTS 15 WATTS
|
Motorola Inc
MOTOROLA[Motorola, Inc]
ON Semiconductor
|
| 2SD1692 2SD1692L 2SD1692K |
NPN SILICON DARLINGTON TRANSISTOR
From old datasheet system
NPN SILICON POWER TRANSISTOR
Low-Power, Single/Dual-Level Battery Monitors with Hysteresis
TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 3A I(C) | TO-126 晶体管|晶体管|达林顿|叩| 100V的五（巴西）总裁| 3A条一（c）|26
|
NEC Corp.
NEC, Corp.
|
| 2N666705 2N6668G 2N6667G |
Darlington Silicon Power Transistors PNP SILICON DARLINGTON POWER TRANSISTORS 10 A, 60−80 V, 65 W
|
ON Semiconductor
|
| 2N6667 2N6667-D |
DARLINGTON POWER TRANSISTORS(PNP SILICON )
Darlington Silicon Power Transistors
|
ON Semiconductor
|
| MJ403203 MJ80203 MJ4035 MJ4032 |
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
SILICON NPN POWER TRANSISTOR
|
STMICROELECTRONICS[STMicroelectronics]
|
| MJE2955T03 MJE34003 MJE52103 MJE585203 MJE80203 MR |
COMPLEMENTARY SILICON POWER TRANSISTORS
COMPLEMETARY SILICON POWER TRANSISTORS
SILICON NPN TRANSISTOR
HIGH VOLTAGE PNP POWER TRANSISTOR
SILICON NPN POWER DARLINGTON TRANSISTOR
RF Power Field Effect Transistors
880 MHz, 40 W AVG. 26 V SINGLE N-CDMA N-Channel Enhancement-Mode Lateral MOSFETs
RF LDMOS Wideband Integrated Power Amplifiers
GENERAL PURPOSE L TO X-BAND GaAs MESFET
10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB
|
FREESCALE
NEC
STMICROELECTRONICS[STMicroelectronics]
|
