| PART |
Description |
Maker |
| RA30H1317M1 RA30H1317M1-101 |
RF MOSFET MODULE 135-175MHz 30W 12.5V 2 Stage Amp. For MOBILE RADIO
|
Mitsubishi Electric Semiconductor
|
| RA30H1317M RA30H1317M-01 RA30H1317M-E01 |
135-175MHz 30W 12.5V MOBILE RADIO
|
Mitsubishi Electric Sem...
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| M67741H 67741H M67741 |
RF POWER MODULE 150-175MHz, 12.5V, 30W, FM MOBILE RADIO
135-160MHz /12.5V /30W / FM MOBILE RADIO
150-175MHz,12.5V,30W, FM MOBILE RADIO
From old datasheet system
150-175MHz /12.5V /30W / FM MOBILE RADIO
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| M67755L |
150-175MHz / 7.2V / 7W / FM PORTABLE RADIO
135-150MHz, 7.2V, 7W, FM PORTABLE RADIO
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| D1027UK |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(150W-28V-175MHz,Push-Pull)(镀金多用DMOS射频硅场效应150W-28V-175MHz,推挽)
METAL GATE RF SILICON FET
|
TT electronics Semelab Limited
Semelab(Magnatec)
Seme LAB
|
| RFP12N06RLE RFD12N06RLESM RFD12N06RLE FN2407 |
From old datasheet system
12A/ 60V/ 0.135 Ohm/ N-Channel/ Logic Level/ Power MOSFETs
12A, 60V, 0.135 Ohm, N-Channel, Logic Level, Power MOSFETs(12A, 60V, 0.135 Ω, N沟道,逻辑电平,功率MOS场效应管) 12 A, 60 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
INTERSIL[Intersil Corporation]
Fairchild Semiconductor, Corp.
|
| M57706L 57706L |
From old datasheet system
135-145MHz 12.5V /8W /FM MOBILE RADIO
135-145MHz 12.5V,8W,FM MOBILE RADIO
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| 2MP04-096 2MP04-096-15 2MP04-096-10 2MP04-096-12 2 |
Specifications
The series of two-stage TE modules has been designed for applications where a relatively large cold side is required as well as two-stage level cooling.
|
RMT Ltd.
|
| 2MP04-060-10 2MP04-060-12 2MP04-060-15 2MP04060 |
Specifications
The series of two-stage TE modules has been designed for applications where a relatively large cold side is required as well as two-stage level cooling.
|
RMT Ltd.
|
