| PART |
Description |
Maker |
| V54C3256164VBUC V54C3256164VBUT V54C3256164VBLT7PC |
256Mbit (16M x 16) SDRAM, LVTTL, low power, 8ns
LOW POWER 256Mbit SDRAM 3.3 VOLT, 54-BALL SOC BGA 54-PIN TSOPII 16M X 16
256Mbit (16M x 16) SDRAM, LVTTL, low power, 7ns
|
Mosel Vitelic Corp
MOSEL[Mosel Vitelic, Corp]
|
| W981216BH W981216 W981216BH-75 W981216BH-75I W9812 |
2M x 4 Banks x 16 Bit SDRAM
Low Power SDRAM
Industrial SDRAM
2M x 4 BANKS x 16 BIT SDRAM
DRAM - Datasheet Reference
|
Winbond Electronics Corp
WINBOND[Winbond]
|
| W986432DH-6I W986432DH-7L W986432DH-5 |
Industrial SDRAM
Low Power SDRAM
|
Winbond Electronics
|
| CMS3216LAF CMS3216LAG CMS3216LAH |
32M(2Mx16) Low Power SDRAM
|
FIDELIX
|
| EM66932ABG-8G EM66932ABG-7.5G EM66932A EM66932ABG- |
4M x 32 Hand-Held Low Power SDRAM (LPSDRAM)
|
ETRON[Etron Technology, Inc.]
|
| EMLS232TA EMLS232TAW-6 EMLS232TAW-6E |
512K x 32 x 4Banks Low Power SDRAM Specificaton
|
Emerging Memory & Logic Solutions Inc
|
| HYB18L256160BC-7.5 HYE18L256160BC-7.5 HYB18L256160 |
Very low Power SDRAM optimized for battery-powered, handheld applications
|
Infineon
|
| V55C2128164V |
128Mbit LOW-POWER SDRAM 2.5 VOLT, TSOP II / BGA PACKAGE 8M X 16
|
Mosel Vitelic, Corp.
|
| M65KA512AB8W3 M65KA512AB |
512Mbit (4 Banks x 8M x 16), 133 MHz Clock Rate, Bare Die, 1.8 V Supply, Low Power SDRAM
|
STMICROELECTRONICS[STMicroelectronics]
|
| HY57V56820BT HY57V56820BLT-S HY57V56820BT-S HY57V5 |
32Mx8|3.3V|8K|K|SDR SDRAM - 256M
SDRAM|4X8MX8|CMOS|TSOP|54PIN|PLASTIC
4 Banks X 8M X 8Bit Synchronous DRAM
SDRAM - 256Mb
|
Hynix Semiconductor
|
| H5MS5162EFR |
536,870,912-bit CMOS Low Power Double Data Rate Synchronous DRAM (Mobile DDR SDRAM)
|
Hynix Semiconductor
|
