| PART |
Description |
Maker |
| LTC1967 LTC1967CMS8 LTC1967IMS8 LTTJ |
Precision Extended Bandwidth, RMS-to-DC Converter
|
LINEAR[Linear Integrated Systems]
|
| Y1183150K000A0L Y1183150K000A1L Y1183150K000A9L Y1 |
Ultra High Precision Bulk Metal㈢ Z-Foil Extended Value Range Resistor
Ultra High Precision Bulk Metal? Z-Foil Extended Value Range Resistor
Ultra High Precision Bulk Metal垄莽 Z-Foil Extended Value Range Resistor
|
Vishay Siliconix
|
| LT6105HDCBPBF LT6105-15 |
Precision, Extended Input Range Current Sense Amplifier
SPECIALTY ANALOG CIRCUIT, PDSO6
|
LINEAR TECHNOLOGY CORP
|
| PI5A381A PI5A381AQ PI5A383A PI5A383AW PI5A385A PI5 |
Precision Wide Bandwidth Analog Switches
|
PERICOM[Pericom Semiconductor Corporation]
|
| AD8610 AD8610AR AD8610ARM AD8610BR |
Precision Very Low Noise Low Input Bias Current Wide Bandwidth JFET Operational Amplifiers OP-AMP, 200 uV OFFSET-MAX, 25 MHz BAND WIDTH, PDSO8
Precision Very Low Noise Low Input Bias Current Wide Bandwidth JFET Operational Amplifiers OP-AMP, 850 uV OFFSET-MAX, 25 MHz BAND WIDTH, PDSO8
|
Analog Devices, Inc.
AD[Analog Devices]
|
| KM416V1204BJ KM416V1004BT-L7 KM416V1204BT-L7 |
3.3V, 1M x 16 bit CMOS DRAM with extended data out, 70ns
1M x 16BIT CMOS DYNAMIT RAM WITH EXTENDED DATA OUT
|
Samsung Electronic
Samsung semiconductor
|
| AD210-16 |
Precision, Wide Bandwidth 3-Port Isolation Amplifier
|
Analog Devices
|
| MC33181 MC33181D MC33181P MC34181 MC34184DTB MC331 |
Low Power, High Slew Rate, Wide Bandwidth, JFET Input Operational Amplifiers QUAD OP-AMP, 11500 uV OFFSET-MAX, 4 MHz BAND WIDTH, PDSO14
Low Power, High Slew Rate, Wide Bandwidth, JFET Input Operational Amplifiers QUAD OP-AMP, 11000 uV OFFSET-MAX, 4 MHz BAND WIDTH, PDSO14
(MC34182 / MC34184) Low Power / High Slew Rate / Wide Bandwidth / JFET Input Operational Amplifiers
Dual Precision Timer 14-PDIP -40 to 85
(MC33181 - MC33184) Low Power / High Slew Rate / Wide Bandwidth / JFET Input Operational Amplifiers
|
http://
Motorola Mobility Holdings, Inc.
ON Semiconductor
Motorola, Inc.
|
| K4E660812E-JC/L K4E640812E-JC/L K4E660812E-TC/L K4 |
8M X 8 EDO DRAM, 45 ns, PDSO32
8M x 8bit CMOS Dynamic RAM with Extended Data Out 8米8位的CMOS动态随机存储器的扩展数据输
(K4E640812E / K4E660812E) 8M x 8bit CMOS Dynamic RAM with Extended Data Out
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
