| PART |
Description |
Maker |
| M45PE80 M45PE80-VMF6G M45PE80-VMF6P M45PE80-VMF6TG |
8 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface
8 Mbit / Low Voltage / Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface
4 Mbit Uniform Sector, Serial Flash Memory 4兆位统一部门，串行闪
|
http://
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
STMicroelectronics N.V.
|
| M45PE10 M45PE10-VMP6 M45PE10-VMP6TG M45PE10-VMP6TP |
4 Mbit Uniform Sector, Serial Flash Memory 4兆位统一部门，串行闪
1 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface
|
STMicroelectronics N.V.
意法半导
|
| M45PE80-VMP6G M45PE80-VMP6TG M45PE80-VMP6TP M45PE8 |
8 Mbit, low voltage, Page-Erasable Serial Flash memory with byte alterability and a 50 MHz SPI bus interface
|
Numonyx B.V
|
| M25PE40-VMP6G M25PE40-VMP6TG |
4 Mbit, Low Voltage, Page-Erasable Serial Flash Memory with Byte-Alterability, 25 MHz SPI Bus, Standard Pinout
|
ST Microelectronics
|
| M45PE10 |
1 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus I
From old datasheet system
|
STMicroelectronics
|
| HY29LV160TT-12 HY29LV160TF-12 HY29LV160TT-70 HY29L |
16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory 1M X 16 FLASH 3V PROM, 70 ns, PBGA48
16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory 1M X 16 FLASH 2.7V PROM, 80 ns, PDSO48
16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory 1M X 16 FLASH 2.7V PROM, 80 ns, PBGA48
Circular Connector; No. of Contacts:55; Series:; Body Material:Aluminum; Connecting Termination:Solder; Connector Shell Size:22; Circular Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:22-55
|
http://
Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
|
| IS41C16105 IS41C16105-50K IS41C16105-50KE IS41C161 |
1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE 1M X 16 FAST PAGE DRAM, 50 ns, PDSO42
1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE 1M X 16 FAST PAGE DRAM, 50 ns, PDSO44
|
Integrated Silicon Solution Inc
ISSI[Integrated Silicon Solution, Inc]
Integrated Circuit Solution Inc
Integrated Silicon Solution Inc
Integrated Silicon Solution, Inc.
|
| M27W202 M27W202-100B6TR M27W202-100F6TR M27W202-10 |
2 Mbit 128Kb x16 Low Voltage UV EPROM and OTP EPROM 2兆位128KB的x16低压紫外线可擦写可编程只读存储器和OTP存储
3-Line To 8-Line Decoders/Demultiplexers 16-SOIC 0 to 70
Triple 3-Input Positive-AND Gates 14-SO 0 to 70
2 Mbit 256Kb x 8 Low Voltage UV EPROM and OTP EPROM
|
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| NAND01G-A NAND128-A NAND256-A NAND01GR3A0AN1 NAND0 |
128 Mbit / 256 Mbit / 512 Mbit / 1 Gbit (x8/x16) 528 Byte/264 Word Page / 1.8V/3V / NAND Flash Memories
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
|
STMicroelectronics
ST Microelectronics
|
| M27W400 M27W400-100B6TR M27W400-100F6TR M27W400-10 |
4 Mbit (512Kb x8 or 256Kb x16), Low Voltage UV EPROM and OTP EPROM
512K X 8 UVPROM, 100 ns, CDIP40
4 Mbit 512Kb x8 or 256Kb x16 Low Voltage UV EPROM and OTP EPROM 4兆位512KB的x856Kb的x16低压紫外线可擦写可编程只读存储器和OTP存储
256 Kbit 32Kb x 8 Low Voltage UV EPROM and OTP EPROM
|
SGS Thomson Microelectronics
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
