| PART |
Description |
Maker |
| 1N4575 1N4766A 1N4767 1N4768A 1N4576 1N4767A 1N457 |
Low-level temperature-compensated zener reference diode. Max voltage 0.048 V. Low-level temperature-compensated zener reference diode. Max voltage 0.070 V. Low-level temperature-compensated zener reference diode. Max voltage 0.014 V. Low-level temperature-compensated zener reference diode. Max voltage 0.024 V. Low-level temperature-compensated zener reference diode. Max voltage 0.028 V. Low-level temperature-compensated zener reference diode. Max voltage 0.099 V. Low-level temperature-compensated zener reference diode. Max voltage 0.002 V. Low-level temperature-compensated zener reference diode. Max voltage 0.005 V. Low-level temperature-compensated zener reference diode. Max voltage 0.003 V.
|
Motorola
|
| ABS07-LR |
32.768kHz SMD Low E SR Crysta l
|
Abracon Corporation
|
| MPXV6115VC6U |
High Temperature Accuracy Integrated Silicon Pressure Sensor On-Chip Signal Conditioned, Temperature Compensated and Calibrated From old datasheet system
|
Motorola
|
| 1N4903A 1N4903 1N4905A 1N4901A 1N4907A 1N4907 1N49 |
TEMPERATURE COMPENSATED ZENER REFERENCE DIODES TSPC 5/ 4-ST-7,62 TSPC 5/11-STF-7,62 TEMPERATURE COMPENSATED ZENER REFERENCE DIODES 温补参考稳压二极管 12.8 V, SILICON, VOLTAGE REFERENCE DIODE, DO-35
|
Compensated Deuices Inc... Compensated Devices Incorporated CDI-DIODE[Compensated Deuices Incorporated] Microsemi, Corp.
|
| 1N4576A-1 |
Temperature Compensated
|
M/A-COM Technology Solu...
|
| ECS-500-144-B ECS-500 |
TEMPERATURE COMPENSATED OSCILLATOR
|
ECS, Inc.
|
| CPT-18-6037 |
Temperature Compensated Power Amplifier
|
TELEDYNE[Teledyne Technologies Incorporated]
|
| C2310 |
Temperature Compensated Crystal Oscillators
|
Vectron
|
| TX-400 |
Temperature Compensated Crystal Oscillator
|
Vectron International
|