| PART |
Description |
Maker |
| SCD0803 SCD0803-15 |
VOLTAGE 200V ~800V 0.8 AMP Glass Passivated Ultra Fast Recovery Rectifier
|
SeCoS Halbleitertechnologie GmbH
SeCoS Halbleitertechnol...
|
| S15GBU40-C S15GBU20-C S15GBU60-C S15GBU20-15 |
Voltage 200V ~800V 15.0Amp Glass passivited Bridge Rectifiers
|
SeCoS Halbleitertechnologie GmbH
SeCoS Halbleitertechnol...
|
| IRFU210B IRFR210B IRFU210BTLTUFP001 IRFU210BTUFP00 |
200V N-Channel B-FET / Substitute of IRFR210 & IRFR210A
200V N-Channel MOSFET
200V N-Channel B-FET / Substitute of IRFU210 & IRFU210A
|
FAIRCHILD[Fairchild Semiconductor]
|
| 2SA1575 2SC4080 2SC4080C 2SA1575C 2SA1575D 2SC4080 |
晶体管|晶体管|进步党| 200伏五（巴西）总裁| 100mA的一（c）|36VAR
TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 200MA I(C) | SOT-89
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
TRANSISTOR | BJT | PNP | 200V V(BR)CEO | 100MA I(C) | TO-236VAR
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
High-Frequency Amp, Wide-Band Amp Applications
High-Frequency Amp/ Wide-Band Amp Applications
|
SANYO[Sanyo Semicon Device]
|
| SR3200 |
VOLTAGE 200V 3.0 Amp Schottky Barrier Rectifiers
|
SeCoS Halbleitertechnologie GmbH
|
| ERC20M |
FAST RECOVERY DIODE( 200V to 800V / 5A )
|
FUJI[Fuji Electric]
|
| TB8S TB2S TB10S TB4S |
Voltage 200V ~ 1000V 1.0 Amp Silicon Bridge Rectifiers
|
SeCoS Halbleitertechnologie GmbH
|
| SM330AS SM320AS SM3200AS SM350AS SM360AS SM3100AS |
Voltage 20V ~ 200V 3.0 Amp Surface Mount Schottky Barrier Rectifiers
|
SeCoS Halbleitertechnologie GmbH
|
| NTE5869 NTE5850 NTE5866 NTE5861 NTE5863 NTE5862 NT |
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 400V. Average forward current 6A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 200V. Average forward current 6A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 100V. Average forward current 6A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 50V. Average forward current 6A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 300V. Average forward current 6A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 500V. Average forward current 6A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 800V. Average forward current 6A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 800V. Average forward current 6A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1000V. Average forward current 6A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 600V. Average forward current 6A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 600V. Average forward current 6A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 500V. Average forward current 6A.
Silicon Power Rectifier Diode 6 Amp
Silicon Power Rectifier Diode, 6 Amp
Silicon Power Rectifier Diode / 6 Amp
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 400V. Average forward current 6A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 100V. Average forward current 6A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 200V. Average forward current 6A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 300V. Average forward current 6A.
|
NTE[NTE Electronics]
|
| SPP06N80C3 SPA06N80C3 |
for lowest Conduction Losses & fastest SwitchingPlease note: Infineon has changed the CoolMOS 800V C2 marking to C3. 800V C2 ...
Cool MOS Power Transistor
Cool MOS⑩ Power Transistor
|
INFINEON[Infineon Technologies AG]
|
| FQD12N20TF |
200V N-Channel QFET; Package: TO-252(DPAK); No of Pins: 2; Container: Tape & Reel
|
FAIRCHILD SEMICONDUCTOR CORP
|
| 2SC4429L 2SC4429M |
TRANSISTOR | BJT | NPN | 800V V(BR)CEO | 8A I(C) | TO-247VAR 晶体管|晶体管|叩| 800V的五（巴西）总裁| 8A条一（c）|47VAR
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits 晶体管|晶体管|叩| 800V的五（巴西）总裁| 8A条一c）|47VAR
|
Electronic Theatre Controls, Inc.
TE Connectivity, Ltd.
|
