| PART |
Description |
Maker |
| HTT1213E |
High Frequency Amplifiers(Twin Type)
Silicon NPN Epitaxial Twin Transistor
|
Hitachi Semiconductor
Renesas Electronics Corporation
|
| SG30TC15M |
Twin Diode
|
Shindengen Electric Mfg.Co.Ltd
|
| SG20JC6M |
Twin Diode
|
Shindengen Electric Mfg.Co.Ltd
|
| SG5LC20USM |
Twin Diode
|
Shindengen Electric Mfg.Co.Ltd
|
| SG30SC6M |
Twin Diode
|
Shindengen Electric Mfg.Co.Ltd
|
| SBJ200-06J |
10 A, 60 V, SILICON, RECTIFIER DIODE, TO-220AB
Schottky Barrier Diode (Twin Type ・ Cathode Common) 60V, 20A Rectifier
|
Sanyo Semicon Device
|
| SBA50-04J |
Schottky Barrier Diode (Twin Type ?Cathode Common) 40V, 5A Rectifier
|
Sanyo Semicon Device
|
| SB20-05H |
Schottky Barrier Diode (Twin Type Cathode Common) 50V, 2A Rectifier
|
SANYO
|
| SBT80-10J |
Schottky Barrier Diode (Twin Type ・ Cathode Common) 100V, 8A Rectifier
|
Sanyo Semicon Device
|
| SB20W03Z |
Schottky Barrier Diode (Twin Type Cathode Common) 30V, 2A Rectifier
|
SANYO
|
| SBT80-10Y |
Schottky Barrier Diode (Twin Type ・ Cathode Common) 100V, 8A Rectifier
|
Sanyo Semicon Device
|
