| PART |
Description |
Maker |
| Q67100-Q607 Q67100-Q608 Q67100-Q433 Q67100-Q542 Q6 |
256 K x 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM 256亩4位动态随机存储器的低功56亩4位动态随机存储器
256 K x 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM 256K X 4 FAST PAGE DRAM, 60 ns, PDIP20
|
http://
SIEMENS A G
SIEMENS AG
|
| HYB39S256160FE-6 HYB39S256160FE-7 HYB39S256407FE-7 |
256-MBit Synchronous DRAM
|
Qimonda AG
|
| IS42S16160-7BL IS42S16160-6BLI |
256-MBIT SYNCHRONOUS DRAM
|
Integrated Silicon Solu...
|
| 48SD3208RPFE 48SD3208RPFH 48SD3208RPFK |
CAP 1.5UF 50V CERAMIC MONO 20% 32M X 8 SYNCHRONOUS DRAM, 6 ns, PDFP72
256 Mb SDRAM 8-Meg X 8-Bit X 4-Banks 32M X 8 SYNCHRONOUS DRAM, 6 ns, PDFP72
|
Maxwell Technologies, Inc
|
| M10B416256A-50J |
256 K x 16 DRAM FAST PAGE MODE
|
Elite Semiconductor Memory Technology Inc
|
| HYB18H256321AF-12 |
256-Mbit x32 GDDR3 DRAM
|
Infineon
|
| AS4SD16M1609 AS4SD16M16DG-75_IT AS4SD16M16DG-75_XT |
256 MB: 16 Meg x 16 SDRAM Synchronous DRAM Memory
|
Austin Semiconductor
|
| HYB18RL25632AC HYB18RL25616AC |
256 Mbit DDR Reduced Latency DRAM
|
INFINEON[Infineon Technologies AG]
|
| MSM586SL MSM586SL-32 MSM586SL-64 |
Soldered 32MB SDRAM (64MB)
|
Advanced Digital Logic, Inc.
|
| HYB39S256800DCL-75 HYB39S256160DCL-8 HYB39S256400D |
256-MBit Synchronous DRAM
256-MBit Synchronous DRAM
|
Infineon Technologies AG
Infineon Technologies A...
|
| D1201UK D1201 |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(10W-12.5V-500MHz,Single Ended)(镀金多用DMOS射频硅场效应10W-12.5V-500MHz,单端)
METAL GATE RF SILICON FET
|
SEME-LAB[Seme LAB]
|
