| PART |
Description |
Maker |
| EIA5060-1S |
5.0-6.0GHz 1W Internally Matched Power FET
|
Excelics Semiconductor
|
| MGFC36V4450A |
4.4 ~ 5.0GHz BAND 4W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Semiconductor
Mitsubishi Electric Corporation
|
| MGFC40V4450A |
4.4 - 5.0GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
|
| MGFC44V4450_98 MGFC44V4450 MGFC44V445098 |
4.4-5.0GHz BAND 24W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| TA044-050-40-43 |
4.4 ~ 5.0GHz 20W High PowerAmplifier
|
Transcom, Inc.
|
| MGFL48L1920 |
1.9-2.0GHz BAND 60W GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| SP5026 SP5026SMP SP5026DP |
1.0GHz 3-Wire Bus Controlled Synthesizer
|
ZARLINK[Zarlink Semiconductor Inc]
|
| TQM829007 TQM829007-PCB |
0.6-1.0GHz ?W Digital Variable Gain Amplifier
|
TriQuint Semiconductor
|
| TIM4450-16UL09 |
HIGH POWER P1dB=42.5dBm at 4.4GHz to 5.0GHz
|
Toshiba Semiconductor
|
| TIM4450-8UL |
HIGH POWER P1dB=39.5dBm at 4.4GHz to 5.0GHz
|
Toshiba Semiconductor
|
| MGFL48V1920 |
From old datasheet system
1.9-2.0GHz BAND 60W GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
