| PART |
Description |
Maker |
| GL-6201 |
Twin Triode
|
General Electric
|
| HTT1213E |
High Frequency Amplifiers(Twin Type)
Silicon NPN Epitaxial Twin Transistor
|
Hitachi Semiconductor
Renesas Electronics Corporation
|
| EC157 |
DISC SEAL TRIODE FOR USE AS POWER AMPLIFIER
|
NXP Semiconductors
|
| TBB1005 TBB1005EMTL-E |
Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier
|
Renesas Electronics Corporation
|
| TBB1004 TBB1004DMTL-E TBB100406 |
Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier
|
Renesas Electronics Corporation
|
| TBB1002 TBB1002BMTL-E TBB100206 |
Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier
|
Renesas Electronics Corporation
|
| TBB1008 |
Twin Build in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier
|
Renesas Electronics Corporation
|
| TBB1004DMTL-H TBB100411 |
Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier
|
Renesas Electronics Corporation
|
| TBB1017 TBB1017SMTL-E |
Twin Built in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier
|
Renesas Electronics Corporation
|
| SB01W05C |
50V, 100mA Rectifier Shottky Barrier Diode (Twin Type Cathode Common)
Small signal(twin type)
50V 100mA Rectifier
50V/ 100mA Rectifier
|
Sanyo Semiconductor
SANYO[Sanyo Semicon Device]
|
