| PART |
Description |
Maker |
| DWBW2F4S02 DWBW2F4S12 DWBW2FTS32 DWBW3FTS32 DWBW3F |
Bandsplitters 200 GHz Channel Spacing
|
JDS Uniphase Corporation
|
| MR181-1 |
RF/LO: 6 to 18 GHz IF: 20 to 200 MHz
|
API Technologies Corp
|
| BUZ901X4S MNT-LC32030-C4 |
32 A, 200 V, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET SOT-227, 4 PIN
32 A, 200 V, N AND P-CHANNEL, Si, POWER, MOSFET SMARTPACK-10
|
TT electronics Semelab, Ltd.
|
| JANTX2N6766 |
N Channel MOSFET; Package: TO-204AE; ID (A): 30; PD (W): 150; BVDSS (V): 200; Rq: 0.83; 30 A, 200 V, 0.065 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE
|
Microsemi, Corp.
|
| ADL5903-EVALZ |
200 MHz to 6 GHz 35 dB TruPwr?Detector
|
Analog Devices
|
| IRF9510 FN2214 |
From old datasheet system
3.0A, 100V, 1.200 Ohm, P-Channel Power MOSFET
3.0A/ 100V/ 1.200 Ohm/ P-Channel Power MOSFET
3.0A, 100V, 1.200 Ohm, P-Channel Power
MOSFET(3.0A, 100V, 1.200 Ω,P沟道功率MOS场效应管)
|
Intersil Corporation
|
| SFF1310Z SFF1310M |
40 AMPS 200 VOLTS 0.050 N-CHANNEL POWER MOSFET 40 A, 200 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3
|
Solid State Devices, Inc.
|
| AGR21090E AGR21090EF AGR21090EU |
90 W, 2.110 GHz-2.170 GHz, N-Channel E-Mode, Lateral MOSFET
|
TriQuint Semiconductor
|
| AGR21030EF |
30 W, 2.110 GHz-2.170 GHz, N-Channel E-Mode, Lateral MOSFET
|
TriQuint Semiconductor
|
| AGR21045EF |
45 W, 2.110 GHz-2.170 GHz, N-Channel E-Mode, Lateral MOSFET
|
TriQuint Semiconductor
|
| CM200TU-12H |
Six IGBTMOD 200 Amperes/600 Volts
240 x 128 pixel format, CFL Backlight with power harness 200 A, 600 V, N-CHANNEL IGBT
|
Powerex Power Semicondu...
POWEREX[Powerex Power Semiconductors]
Powerex, Inc.
|
| SUM110N08-05 70511 |
N-Channel 75-V (D-S) 200C MOSFET
N-Channel 75-V (D-S) 200∑C MOSFET
N-Channel 75-V (D-S) 200隆?C MOSFET
N-Channel 75-V (D-S) 200°C MOSFET
|
Vishay Intertechnology,Inc.
VISAY[Vishay Siliconix]
|
|
