| PART |
Description |
Maker |
| AD8353 AD8353ACP-REEL7 AD8353-EVAL AD8353ACP-R2 |
100 MHz-2.7 GHz RF Gain Block
100 MHz - 2.7 GHz RF Gain Blocks, Silicon Bipolar Amplifiers
|
Analog Devices, Inc.
AD[Analog Devices]
|
| AD8354ACP-R2 AD8354-EVAL AD8354ACP-REEL7 |
100 MHz-2.7 GHz RF Gain Block
100 MHz - 2.7 GHz RF Gain Blocks, Silicon Bipolar Amplifiers
|
Analog Devices, Inc.
|
| AGR21030EF |
30 W, 2.110 GHz-2.170 GHz, N-Channel E-Mode, Lateral MOSFET
|
TriQuint Semiconductor
|
| PTB20125 |
100 Watts, 1.8.0 GHz PCN/PCS Power Transistor
100 Watts, 1.8-2.0 GHz PCN/PCS Power Transistor 100瓦，1.8-2.0 GHz的PCN / PCS的功率晶体管
|
Ericsson Microelectronics
ERICSSON[Ericsson]
|
| AN0110NA |
100 V, 100 om, N-channel enhancement-mode D-MOS FET 8-channel array
|
Topaz Semiconductor
|
| BSP372 Q67000-S300 BSP372E-6327 BSP372E6327 |
1.7 A, 100 V, 0.31 ohm, N-CHANNEL, Si, POWER, MOSFET
SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level Avalanche rated SIPMOS小信号晶体管（N通道增强模式逻辑层次额定雪崩
1.7 A, 100 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET
From old datasheet system
|
SIEMENS A G
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| MR208-1 |
RF/LO: 2 to 4 GHz IF: DC to 100 MHz
|
API Technologies Corp
|
| ADL5500 |
100 MHz TO 6 GHz TruPwrDetector
|
Analog Devices
|
| AD8354 |
100 MHz-2.7 GHz RF Gain Block
|
AD
|
| AD8354 |
100 MHz-2.7 GHz RF Gain Block
|
Analog Devices
|
| TGL2205-SM |
2-6 GHz 100 Watt VPIN Limiter
|
TriQuint Semiconductor
|
| ADL5500ACBZ-P2 ADL5500ACBZ-P7 ADL5500-EVALZ ADL550 |
100 MHz to 6 GHz TruPwr Detector
|
http://
AD[Analog Devices]
|
