| PART |
Description |
Maker |
| SSTS2065CT |
High Junction Temperature
|
Silikron Semiconductor ...
|
| SSTS2045CT |
High Junction Temperature
|
Silikron Semiconductor Co.,...
|
| SSTS20100R |
High Junction Temperature
|
Silikron Semiconductor ...
|
| SSTS20100 |
High Junction Temperature
|
Silikron Semiconductor ...
|
| SSBD1045CTL |
High Junction Temperature
|
Silikron Semiconductor ...
|
| SSBD10L45CT |
High Junction Temperature
|
Silikron Semiconductor ...
|
| SSTS30100CTF |
High Junction Temperature High ESD Protection High Forward & Reverse Surge capability
High Junction Temperature High ESD Protection High Forward & Reverse Surge capability
|
Silikron Semiconductor Co.,LTD.
Silikron Semiconductor ...
|
| NESG3031M05 NESG3031M05-T1 |
NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR
|
NEC Corp.
NEC[NEC]
|
| NESG2101M05-T1 NESG2101M05 |
NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR
|
NEC Corp.
NEC[NEC]
|
| NESG2101M16 NESG2101M16-T3 |
NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR 邻舍npn型硅锗高频陈德良SIS的职权范
|
NEC, Corp.
NEC[NEC]
|
| LSIC2SD120A20 |
This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current, high surge capability and a maximum operating junction temperature of 175 °C
|
Littelfuse
|
