| PART |
Description |
Maker |
| HWF1686YC |
L-Band Power FET Via Hole Chip
|
Hexawave, Inc
|
| HWC27YC |
C-Band Power FET Via Hole Chip
|
Electronic Theatre Controls, Inc.
ETC[ETC]
|
| HWC27NC |
C-Band Power FET Non-Via Hole Chip
|
Hexawave, Inc
|
| NE5531079A-A NE5531079A-T1-A NE5531079A-T1A |
UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET LEAD FREE, 79A, 4 PIN
7.5 V OPERATION SILICON RF POWER LDMOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS
|
Duracell
Renesas Electronics Corporation
|
| NE5531079A-T1 NE5531079A-T1-A NE5531079A-T1A-A |
7.5 V OPERATION SILICON RF POWER LDMOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS
SILICON POWER MOS FET
|
California Eastern Labs
|
| MGFC39V3742A04 MGFC39V3742A |
C BAND, GaAs, N-CHANNEL, RF POWER, JFET
3.7 ~ 4.2GHz BAND 8W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| NE6500496 |
4 W L / S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
4 W L S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
|
NEC[NEC]
|
| HWF1686RA |
5.4 W L-band GaAs power FET
|
HEXAWAVE
|
| MGF0910A_1 MGF0910A MGF0910A1 |
L, S BAND POWER GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| FLC107WG |
C-Band Power GaAs FET
|
EUDYNA[Eudyna Devices Inc]
|
