Part Number Hot Search : 
3KP40CA MP2604DQ MCH6635 MB88346L BCV63 J100A CS435105 721RP
Product Description
Full Text Search

MRF373ALR108 - RF Power Field Effect Transistors

MRF373ALR108_4378848.PDF Datasheet


 Full text search : RF Power Field Effect Transistors
 Product Description search : RF Power Field Effect Transistors


 Related Part Number
PART Description Maker
NDP6020P NDB6020P P-Channel Enhancement Mode Field Effect Transistor24A,-20V0.05ΩP沟道增强型MOS场效应管(漏电流-24A, 漏源电压-20V,导通电0.05Ω 24 A, 20 V, 0.05 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB
P-Channel Logic Level Enhancement Mode Field Effect Transistor
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
http://
IRFF110 IRFF111 IRFF112 IRFF113 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 3.0A.
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 3.0A.
Power MOS Field-Effect Transistors
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 3.5A.
General Electric Solid State
GE Solid State
SSM3J02T TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
Field Effect Transistor Silicon P Channel MOS Type Power Management Switch High Speed Switching Applications
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
PTF080601F PTF080601E PTF080601A PTF080601 LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz LDMOS射频功率场效应晶体管60瓦,860-960兆赫
LDMOS RF Power Field Effect Transistor 60 W 860-960 MHz
LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz
INFINEON[Infineon Technologies AG]
SSM3J13T TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII)
Field Effect Transistor Silicon P Channel MOS Type (U-MOSII) Power Management Switch High Speed Switching Applications
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
IRFF130 IRFF131 IRFF132 IRFF133 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 7.0A.
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 8.0A.
N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSISTORS
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 7.0A.
General Electric Solid State
GE Solid State
MTM15N20 Power Field Effect Transistor
New Jersey Semi-Conductor P...
MRF5S21045 MRF5S21045NR1 MRF5S21045NBR1 MRF5S21045 RF Power Field Effect Transistors
FREESCALE[Freescale Semiconductor, Inc]
VN30ABA VN35ABA Field Effect Power Transistor
General Electric Solid State
MTM15N05L MTM15N06L MTP15N05EL MTP15N06L MTP15N05L POWER FIELD EFFECT TRANSISTOR
Motorola, Inc.
MRF282 MRF282ZR1 MRF282SR1 RF Power Field Effect Transistors
Freescale Semiconductor, Inc
MTP6N10 POWER FIELD EFFECT TRANSISTOR
MOTOROLA[Motorola, Inc]
 
 Related keyword From Full Text Search System
MRF373ALR108 应用线路 MRF373ALR108 Cirkuit diagram MRF373ALR108 upload MRF373ALR108 mosfet MRF373ALR108 analog
MRF373ALR108 ic查找网站 MRF373ALR108 ocr MRF373ALR108 circuit board MRF373ALR108 Band MRF373ALR108 for sale
 

 

Price & Availability of MRF373ALR108

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X
0.37908697128296