| PART |
Description |
Maker |
| MG100Q2YS65H |
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications
TOSHIBA IGBT Module Silicon N Channel IGBT
|
Toshiba Semiconductor
|
| 7MBP10PE120 7MBR10PE120 |
IGBT module (S series)
IGBT Module(Power Integrated Module)
|
FUJI[Fuji Electric]
|
| PSHI50D-06 PSHI50D_06 PSHI50D/06 PSHI50D06 |
IGBT Module
IGBT Module Short Circuit SOA Capability
|
Powersem GmbH
|
| BSM75GD120DN2 075D12N2 C67070-A2516-A67 |
IGBT Power Module (Solderable Power module 3-phase full-bridge Including fast free-wheel diodes) 103 A, 1200 V, N-CHANNEL IGBT
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| FZ1200R17KE3 |
IGBT-Wechselrichter / IGBT-inverter
IGBT Power Module
|
eupec GmbH
|
| IXGE75N100Z IXGE50N90Z IXTE9N65X4U IXGE50N50Z |
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1KV V(BR)CES | 75A I(C)
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 900V V(BR)CES | 50A I(C)
TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 650V V(BR)DSS | 9A I(D) 晶体管| MOSFET功率模块|独立|650V五（巴西）直| 9A条（丁）
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 500V V(BR)CES | 50A I(C) 晶体管| IGBT功率模块|独立| 500V五（巴西）国际消费电子展| 50A条一（c
|
IXYS, Corp.
|
| BSM400GA120DL 400A12L C67076-A2302-A70 |
IGBT Power Module (Low Loss IGBT Low inductance single switch Including fast free- wheeling diodes) 680 A, 1200 V, N-CHANNEL IGBT
From old datasheet system
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| 7MBR10SA140 |
IGBT MODULE (S series) 1400V / 10A / PIM 15 A, 1400 V, N-CHANNEL IGBT
|
Fuji Electric Holdings Co., Ltd.
FUJI[Fuji Electric]
|
| CPU165MM |
IGBT SIP MODULE Short Circuit Rated Fast IGBT
|
IRF[International Rectifier]
|
| CPV364MK |
IGBT SIP MODULE Short Circuit Rated UltraFast IGBT
|
IRF[International Rectifier]
|
| CPV363M4K |
IGBT IGBT SIP MODULE Short Circuit Rated UltraFast
|
IRF[International Rectifier]
|
| FD1600R17KF6CB2 |
1700V IGBT Module with low loss IGBT of 2nd generation and soft EmCon Diode
|
Infineon Technologies AG
|
