| PART |
Description |
Maker |
| 2SD1055 2SD1766 D1758 2SD1758 2SD1919 2SD1862 A580 |
Medium Power Transistor (32V, 2A)
2000 mA, 32 V, NPN, Si, SMALL SIGNAL TRANSISTOR
Medium Power Transistor 32V/ 2A
Medium Power Transistor 32V, 2A
Medium Power Transistor 32V 2A
From old datasheet system
|
ROHM[Rohm]
Rohm CO.,LTD.
|
| 2SC2982 E000777 |
TRANSISTOR (STOROBO FLASH, MEDIUM POWER AMPLIFIER APPLICATIONS) 晶体管（STOROBO闪光，中等功率放大器应用
TRANSISTOR (STOROBO FLASH/ MEDIUM POWER AMPLIFIER APPLICATIONS)
From old datasheet system
|
Toshiba, Corp.
Toshiba Corporation
Toshiba Semiconductor
|
| 2SC3072 |
TRANSISTOR (STROBE FLASH/ MEDIUM POWER AMPLIFIER APPLICATIONS)
Transistor Silicon NPN Epitaxial Type (PCT process) Strobe Flash Applications Medium Power Amplifier Applications
|
Toshiba Semiconductor
|
| SG2824J_DESC SG28XXL_883B JAN2801J JAN2802J JAN280 |
HIGH VOLTAGE MEDIUM CURRENT DRIVER ARRAYS
Driver - Medium Current Array; Package: LCC; 0.6 A, 50 V, 8 CHANNEL, NPN, Si, POWER TRANSISTOR
Driver - Medium Current Array; Package: DIP; 0.6 A, 50 V, 8 CHANNEL, NPN, Si, POWER TRANSISTOR
Driver - Medium Current Array; Package: DIP; 0.5 A, 95 V, 8 CHANNEL, NPN, Si, POWER TRANSISTOR
Driver - Medium Current Array; Package: LCC; 0.5 A, 50 V, 8 CHANNEL, NPN, Si, POWER TRANSISTOR
|
Microsemi, Corp.
http://
Microsemi Corporation
|
| CSB546O CSB546R CSB546Y |
25.000W Medium Power PNP Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 70 - 140 hFE. Complementary CSD401O
25.000W Medium Power PNP Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 40 - 80 hFE. Complementary CSD401R
25.000W Medium Power PNP Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 120 - 240 hFE. Complementary CSD401Y
25.000W Medium Power PNP Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 40 - 240 hFE. Complementary CSD401
|
Continental Device India Limited
|
| 2N3209DCSM |
Dual High Speed Medium Power PNP Switching Transistor In Hermetic Cermic Surface Mount Package For High Reliability Application(高速、中等功率、开关型双PNP晶体管（高可靠性、陶瓷表贴封装）)
DUAL HIGH SPEED/ MEDIUM POWER PNP GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE
DUAL HIGH SPEED, MEDIUM POWER PNP GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE
|
TT electronics Semelab Limited
SEME-LAB[Seme LAB]
|
| L2SA1036KQLT1G L2SA1036KRLT1G |
Medium Power Transistor Epitaxial planar type PNP silicon transistor
|
Leshan Radio Company
|
| 2N6123 2N6124 |
40.000W Medium Power NPN Plastic Leaded Transistor. 80V Vceo, 4.000A Ic, 20 - 80 hFE.
40.000W Medium Power PNP Plastic Leaded Transistor. 45V Vceo, 4.000A Ic, 25 - 100 hFE.
|
Continental Device India Limited
|
|
