| PART |
Description |
Maker |
| S8M 1N5614 S6M 1N5618 S2M |
Axialleaded Hermetically Sealed Standard Recovery Rectifier Diode(????靛?600V,骞冲?姝e??垫?2A锛?酱??????瀵??????㈠??存?浜??绠? RECTIFIER, up to 1kV, 2A, 2μs RECTIFIER, up to 1kV, 2A, 2楼矛s
|
Semtech Corporation
|
| PT100F |
BRIDGE RECTIFIER,1-PHASE FULL-WAVE,1KV V(RRM),BR-3Q From old datasheet system
|
Electronic Devices Inc
|
| FF75R10KN FF150R10KN FF100R10KN FS50R10KF2 FS8R06K |
TRANSISTOR | IGBT | N-CHAN | DUAL | 1KV V(BR)CES | 75A I(C) | M:HL093HD5.6 TRANSISTOR | IGBT | N-CHAN | DUAL | 1KV V(BR)CES | 150A I(C) | M:HL093HW048 TRANSISTOR | IGBT | N-CHAN | DUAL | 1KV V(BR)CES | 100A I(C) | M:HL093HW048 TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 1KV V(BR)CES | 50A I(C) TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 600V V(BR)CES | 8A I(C) 晶体管| IGBT功率模块| 3 - PH值大桥| 600V的五(巴西)国际消费电子展| 8A条一(c TRANSISTOR | IGBT | N-CHAN | DUAL | 1KV V(BR)CES | 15A I(C) | M:HL080HD5.3 晶体管| IGBT的|正陈|双| 1KV交五(巴西)国际消费电子展|5A一(c)|米:HL080HD5.3 TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 600V V(BR)CES | 75A I(C) 晶体管| IGBT功率模块| 3 - PH值大桥| 600V的五(巴西)国际消费电子展| 75A条一(c
|
Delta Electronics, Inc. Fuji Electric Holdings Co., Ltd. Infineon Technologies AG
|
| ET1275 1SI50A100 |
TRANSISTOR | BJT POWER MODULE | INDEPENDENT | 1KV V(BR)CEO | 15A I(C) TRANSISTOR | BJT POWER MODULE | INDEPENDENT | 1KV V(BR)CEO | 50A I(C) 晶体管|晶体管电源模块|独立| 1KV交五(巴西)总裁| 50A条一(c
|
IXYS, Corp.
|
| P6CG244R8ZS P6CG0503ZS P6CG0505ZS P6CG054R8ZS P6CG |
Input voltage:12V, output voltage 4.85/4.85V (100/100mA), 1KV isolated 0.6-1W regulated dual split output Input voltage:24V, output voltage 4.85/4.85V (100/100mA), 1KV isolated 0.6-1W regulated dual split output Input voltage:5V, output voltage 4.85/4.85V (100/100mA), 1KV isolated 0.6-1W regulated dual split output P6CG-XXXXZS 1KV ISOLATED 0,6 - 1 W REGULATED DUAL SPLIT OUTPUT SIP7 P6CG - XXXXZS 1KV交隔0,6 - 1瓦稳压双输出SIP7劈裂
|
PEAK[PEAK electronics GmbH]
|
| P6CG-124R8E P6CG-054R8E P6CG-244R8E P6CG-0512E P6C |
Input voltage:12V, output voltage 4.85V (200mA), 1KV isolated 0.6-1.5W regulated single output Input voltage:5V, output voltage 4.85V (200mA), 1KV isolated 0.6-1.5W regulated single output Input voltage:24V, output voltage 4.85V (200mA), 1KV isolated 0.6-1.5W regulated single output Input voltage:5V, output voltage 12V (100mA), 1KV isolated 0.6-1.5W regulated single output Input voltage:24V, output voltage 3.3V (200mA), 1KV isolated 0.6-1.5W regulated single output Input voltage:12V, output voltage 9V (150mA), 1KV isolated 0.6-1.5W regulated single output Input voltage:12V, output voltage 3V (200mA), 1KV isolated 0.6-1.5W regulated single output Input voltage:5V, output voltage 9V (150mA), 1KV isolated 0.6-1.5W regulated single output Input voltage:12V, output voltage 12V (100mA), 1KV isolated 0.6-1.5W regulated single output
|
PEAK electronics
|
| 1N6631 |
Diode Switching 1.1KV 1.4A 2-Pin Case E
|
New Jersey Semiconductor
|
| P6BU-XXXXZ |
1KV ISOLATED 1W UNREGULATED DUAL OUTPUT DIP8
|
PEAK electronics
|
| P10CU-247R2Z P10CU-0505Z P10CU-0512Z P10CU-0515Z P |
1KV ISOLATED 2W UNREGULATED DUAL OUTPUT SIP7
|
PEAK[PEAK electronics GmbH]
|