| PART |
Description |
Maker |
| MMG3012NT1-12 |
Heterojunction Bipolar Transistor
|
Freescale Semiconductor...
|
| MMZ09312BT1 |
Heterojunction Bipolar Transistor
|
Freescale Semiconductor
|
| MMG3002NT112 |
Heterojunction Bipolar Transistor
|
Freescale Semiconductor, Inc
|
| BFP720F |
C Heterojunction Wideband RF Bipolar Transistor
|
Infineon Technologies AG
|
| MT3S113P |
Radio-frequency SiGe Heterojunction Bipolar Transistor
|
Toshiba, Corp.
|
| MMG3001NT1 |
Heterojunction Bipolar Transistor Technology (InGaP HBT)
|
Freescale Semiconductor, Inc
|
| MT3S111P |
Radio-frequency SiGe Heterojunction Bipolar Transistor
|
TOSHIBA
|
| MMG3005NT1 MMG3005NT108 |
Heterojunction Bipolar Transistor Technology (InGaP HBT)
|
Freescale Semiconductor, Inc
|
| MMG3002NT1 |
Heterojunction Bipolar Transistor Technology (InGaP HBT)
|
MOTOROLA[Motorola, Inc]
|
| MMG3015NT1 |
Heterojunction Bipolar Transistor Technology (InGaP HBT)
|
Freescale Semiconductor, Inc
|
| MT3S111 |
Radio-frequency SiGe Heterojunction Bipolar Transistor
|
TOSHIBA
|
| IMZ2A |
COMPLEMENTARY DUAL GENERAL PURPOSE AMPLIFIER TRANSIS
|
Pan Jit International Inc.
|