| PART |
Description |
Maker |
| 2SJ201 E001264 |
From old datasheet system
HGIH POWER AMPLIFIER APPLICATION
P CHANNEL MOS TYPE (HIGH POWER AMPLIFIER APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
| KSD-T0D013-000 |
Power amplifier application
|
KODENSHI KOREA CORP.
|
| 2SB90610 |
Audio Frequency Power Amplifier Application
|
Toshiba Semiconductor
|
| 2SD122110 |
Audio Frequency Power Amplifier Application
|
Toshiba Semiconductor
|
| 2SB90607 2SB906 |
Audio Frequency Power Amplifier Application
|
Toshiba Semiconductor
|
| 2SJ31307 |
Audio Frequency Power Amplifier Application
|
Toshiba Semiconductor
|
| 2SC4604 2SC460404 |
Power Amplifier Application Power Switching Applications.
|
Toshiba Semiconductor
|
| 2SA1298 |
Transistor Silicon PNP Epitaxial (PCT process) Low Frequency Power Amplifier Application Power Switching Applications
|
TOSHIBA
|
| 2SC5344 |
NPN Silicon Transistor (Audio power amplifier application)
|
AUK[AUK corp]
|
| 2SK153006 |
N CHANNEL MOS TYPE (HIGH POWER AMPLIFIER APPLICATION)
|
Toshiba Semiconductor
|
| 2SB1429 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE POWER AMPLIFIER APPLICATION
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SJ313 |
P CHANNEL MOS TYPE (AUDIO FREQUENCY POWER AMPLIFIER APPLICATION)
|
TOSHIBA[Toshiba Semiconductor]
|
