| PART |
Description |
Maker |
| TPCF8B01 |
MOSFET TPC Series
TOSHIBA Multi-Chip Device Silicon P Channel MOS Type (U-MOS III) / Schottky Barrier Diode
|
TOSHIBA[Toshiba Semiconductor]
|
| SSM3K03FE |
100 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch Applications
|
TOSHIBA[Toshiba Semiconductor]
|
| UPA675T UPA675T-T1 UPA675T-T2 UPA675T-A |
100 mA, 16 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING
N-channel enhancement type MOS FET
|
NEC
|
| 2SK2225 |
2 A, 1500 V, 12 ohm, N-CHANNEL, Si, POWER, MOSFET
Silicon N Channel MOS FET
|
Hitachi Semiconductor
|
| 2SK1337 2SK1337TZ-E |
300 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
Silicon N Channel MOS FET
|
Renesas Electronics Corporation
|
| 2SK3022 |
Silicon N-Channel Power F-MOS FET 5000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
Panasonic, Corp.
Panasonic Semiconductor
|
| 2SJ296 2SJ296S 2SJ296L |
TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 15A I(D) | TO-263AB
Silicon P-Channel MOS FET(P沟道MOSFET) 硅P沟道场效应晶体管性（P沟道MOSFET的）
|
Hitachi,Ltd.
|
| 3SK298ZP-TL-E |
UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET LEAD FREE, SC-82, CMPAK-4
Silicon N-Channel Dual Gate MOS FET
|
Renesas Electronics Corporation
|
| 3SK296ZQ-TL-E |
UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET LEAD FREE, SC-82A, CMPAK-4
Silicon N-Channel Dual Gate MOS FET
|
Renesas Electronics Corporation
|
| MP4211 |
POWER MOSFET MODULE SILICON P CHANNEL MOS TYPE
|
TOSHIBA[Toshiba Semiconductor]
|
|
