| PART |
Description |
Maker |
| SDM-08060-B1F SDM-08060-B1FY |
869-894 MHz Class AB 65W Power Amplifier Module
|
SIRENZA MICRODEVICES
|
| DB-900-80W 7733 |
80W / 26V / 869-894 MHZ PA USING 2X PD57045S
From old datasheet system
80W / 26V / 869-894 MHZ PA USING 2X PD57045S
|
ST Microelectronics
STMicroelectronics
|
| PTFA082201E09 PTFA082201F |
Thermally-Enhanced High Power RF LDMOS FETs 220 W, 869 ??894 MHz
Thermally-Enhanced High Power RF LDMOS FETs 220 W, 869 ?894 MHz
|
Infineon Technologies AG
|
| DB-900-100W |
100W / 26V / 869-894 MHZ PA USING 2X PD57060S
100W / 26V / 869-894 MHZ PA USING 2X PD57060S
|
ST Microelectronics
|
| MAFR-000083-AS1C1T |
Single Junction Drop-In Circulator 869 MHz-894 MHz
|
M/A-COM Technology Solutions, Inc.
|
| PC0882DG-21 |
869 MHz - 894 MHz RF/MICROWAVE 3 PORT CIRCULATOR
DROP-IN CIRCULATOR
|
RF MICRO DEVICES INC
PDI[PREMIER DEVICES, INC.]
|
| AWB7225 |
860 - 894 MHz Small-Cell Power Amplifier Module
|
ANADIGICS, Inc
|
| 08090 PTF080901 PTF080901E PTF080901F 8090 |
LDMOS RF Power Field Effect Transistor 90 W, 869-960 MHz
LDMOS RF Power Field Effect Transistor 90 W 869-960 MHz
LDMOS RF Power Field Effect Transistor 90 W/ 869-960 MHz
|
INFINEON[Infineon Technologies AG]
Infineon Technologies A...
|
| 2021-25 |
25 W, 24 V, 2000-2130 MHz common base transistor
25 Watts, 24 Volts, Class C Microwave 2000 - 2130 MHz
BJT
2000-2400 MHz, Class C, Common Base; fO (MHz): 2100; P(out) (W): 25; P(in) (W): 5; Gain (dB): 7.5; Vcc (V): 24; Case Style: 55AW-1 S BAND, Si, NPN, RF POWER TRANSISTOR
|
GHz Technology
Microsemi, Corp.
|
