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M65KG512AB6W9 - 512Mbit (4 banks x 8 Mb x 16) 1.8 V supply, DDR low power SDRAM

M65KG512AB6W9_4320741.PDF Datasheet


 Full text search : 512Mbit (4 banks x 8 Mb x 16) 1.8 V supply, DDR low power SDRAM
 Product Description search : 512Mbit (4 banks x 8 Mb x 16) 1.8 V supply, DDR low power SDRAM


 Related Part Number
PART Description Maker
M65KG512AB6W9 M65KG512AB M65KG512AB6W8 M65KG512AB8 512Mbit (4 banks x 8 Mb x 16) 1.8 V supply, DDR low power SDRAM
STMicroelectronics
K4S510432M K4S510432M-TC1H K4S510432M-TC1L K4S5104 32M x 4Bit x 4 Banks Synchronous DRAM Data Sheet
512Mbit SDRAM 32M x 4bit x 4 Banks Synchronous DRAM LVTTL
Samsung Electronic
Samsung semiconductor
MT48LC16M16A2P-75DTR SDR SDRAM MT48LC64M4A2 ?16 Meg x 4 x 4 banks MT48LC32M8A2 ?8 Meg x 8 x 4 banks MT48LC16M16A2 ?4 Meg x 16 x 4 banks
Micron Technology
MT41J256M8 MT41J128M16 MT41J128M16HA-15EDTR MT41J1 DDR3 SDRAM MT41J512M4 64 Meg x 4 x 8 Banks MT41J256M8 32 Meg x 8 x 8 Banks MT41J128M16 16 Meg x 16 x 8 Banks
2Gb: x4, x8, x16 DDR3 SDRAM Features
DDR3 SDRAM MT41J512M4 ?64 Meg x 4 x 8 Banks MT41J256M8 ?32 Meg x 8 x 8 Banks MT41J128M16 ?16 Meg x 16 x 8 Banks
Micron Technology
K4S511632M K4S511632M-TC K4S511632M-TL1H K4S511632 512Mbit SDRAM
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
K4J52324QC K4J52324QC-BJ14 K4J52324QC-BC14 K4J5232 512Mbit GDDR3 SDRAM
SAMSUNG[Samsung semiconductor]
HYB25D512800AT-7F 512Mbit Double Data Rate SDRAM
Infineon Technologies A...
HY27US08121M HY27US16121M HY27USXXX HY27SS08121M H 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
HYNIX[Hynix Semiconductor]
W9864G6GH-5 W9864G6GH-7S W9864G6GH-6 W9864G6GH-6I 1M × 4 BANKS × 16 BITS SDRAM
1M 4 BANKS 16 BITS SDRAM 4M X 16 SYNCHRONOUS DRAM, 5.5 ns, PDSO54
Winbond Electronics Corp
http://
Winbond Electronics, Corp.
K4S640432F-TL75 K4S640432F K4S640432F-TC1H K4S6404 4M x 4Bit x 4 Banks Synchronous DRAM Data Sheet
4M x 4Bit x 4 Banks Synchronous DRAM LVTTL
Samsung Electronic
SAMSUNG[Samsung semiconductor]
 
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