| PART |
Description |
Maker |
| 2SJ211 |
MOS Fied Effect Transistor
|
Guangdong Kexin Industrial Co.,Ltd
|
| 2SJ210 |
MOS Fied Effect Transistor
|
Guangdong Kexin Industrial Co.,Ltd
|
| BM-10EG57ND |
hi-eff red chips and green chips, the hi-eff red chips are made from GaAsP on GaP substrate, the green chips are made from GaP on GaP substrate.
5X7 DOT MATRIX DISPLAY, HIGH EFFICIENCY RED/YELLOW GREEN, 30.48 mm
|
BRIGHT LED ELECTRONICS CORP
AMERICAN BRIGHT OPTOELECTRONICS CORP
|
| BL-HE134A-TRB |
Hi-Eff Red Suitable for all SMT assembly methods.
|
BRIGHT LED ELECTRONICS CORP
|
| BL-BEG201 |
Hi-Eff Red and Green Low current requirement.
|
BRIGHT LED ELECTRONICS CORP
|
| BL-HE136D-TRB |
Hi-Eff Red Suitable for all SMT assembly methods.
|
Bright LED Electronics Corp.
|
| BL-HE134C-TRB |
Hi-Eff Red Suitable for all SMT assembly methods.
|
BRIGHT LED ELECTRONICS CORP
|
| BR-B4534-15V |
GaAsP/GaP Hi-Eff Red For DC and pulse operation.
|
http://
|
| BD-A404ND |
hi-eff red chips, GaAsP on GaP substrate.
|
BRIGHT LED ELECTRONICS CORP
|
| BL-S4532 |
GaAsP/GaP Hi-Eff Red Low power consumption.
|
BRIGHT LED ELECTRONICS CORP
|
| BB-B4171-C |
GaAsP/GaP Hi-Eff Red TTL & C-MOS circuit
|
BRIGHT LED ELECTRONICS CORP
|
