| PART |
Description |
Maker |
| SUM09MN20-270 SUM09N20-270 |
N-Channel 200-V (D-S) 175C MOSFET
N-Channel 200-V (D-S) 175 Degree Celcious MOSFET
|
VISAY[Vishay Siliconix]
Vishay Intertechnology,Inc.
|
| IRF9510 FN2214 |
From old datasheet system
3.0A, 100V, 1.200 Ohm, P-Channel Power MOSFET
3.0A/ 100V/ 1.200 Ohm/ P-Channel Power MOSFET
3.0A, 100V, 1.200 Ohm, P-Channel Power
MOSFET(3.0A, 100V, 1.200 Ω,P沟道功率MOS场效应管)
|
Intersil Corporation
|
| QJD0240002 |
Dual Power MOSFET Module (400 Amperes/200 Volts) 400 A, 200 V, 0.006 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
|
Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
|
| IXFT74N20 IXFR90N20 IXFE24N100 |
HIPERFET POWER MOSFETs 74 A, 200 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-268
90 A, 200 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET ISOPLUS247, 3 PIN
Single MOSFET Die 22 A, 1000 V, 0.39 ohm, N-CHANNEL, Si, POWER, MOSFET
|
IXYS, Corp.
|
| STN4NF20L |
N-channel 200 V, 1.1 Ohm typ., 1 A STripFET(TM) II Power MOSFET in SOT-223 package
N-channel 200 V, 1.1 Ω, 1 A SOT-223 low gate charge STripFET II Power MOSFET
|
ST Microelectronics
STMicroelectronics
|
| BSS138W-7-F |
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 200 mA, 50 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
Diodes, Inc.
|
| MTY55N20E MTY55N20E_D ON2720 |
TMOS POWER FET 55 AMPERES 200 VOLTS RDS(on) = 0.028 OHM 55 A, 200 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
From old datasheet system
|
Motorola Mobility Holdings, Inc.
Motorola, Inc
ON Semi
|
| IRFF230 2N6798LCC4-JQR-B 2N6798LCC4-JQR-A |
N-CHANNEL ENHANCEMENT
5.5 A, 200 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF HERMETIC SEALED, METAL, TO-39, 3 PIN
|
Seme LAB
TT electronics Semelab, Ltd.
|
| AP18N20GH-HF AP18N20GJ-HF AP18N20GH-HF-14 AP18N20G |
18 A, 200 V, 0.17 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3
18 A, 200 V, 0.17 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251 HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Simple Drive Requirement
|
Advanced Power Electronics, Corp.
Advanced Power Electronics Corp.
Advanced Power Electronics ...
|
| MCH6601 |
200 mA, 30 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
|
| APT20M11JVR |
Power MOSFET; Package: ISOTOP®; ID (A): 175; RDS(on) (Ohms): 0.011; BVDSS (V): 200; 175 A, 200 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 200V 175A 0.011 Ohm
|
Microsemi, Corp.
ADPOW[Advanced Power Technology]
|
| 2SJ56709 2SJ567 2SJ5672-7J1B |
2.5 A, 200 V, 2 ohm, P-CHANNEL, Si, POWER, MOSFET
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (MOSV)
|
Toshiba Semiconductor
|
|
