| PART |
Description |
Maker |
| 2SK2411-Z |
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 30A I(D) | TO-263AB
Switching N-Channel Power MOS FET
|
NEC Electronics
|
| MSN0650Z MSN0650Z-TO251 |
60V(D-S) N-Channel Enhancement Mode Power MOS FET
|
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|
| MSN0675K-TO220-3L |
60V(D-S) N-Channel Enhancement Mode Power MOS FET
|
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|
| MSN0603L MSN0603L-SOT23 |
60V(D-S) N-Channel Enhancement Mode Power MOS FET
|
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|
| RJK0651DPB RJK0651DPB-00-J5 RJK0651DPB-13 |
60V, 25A, 14m max. Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
| RJK0629DPK RJK0629DPK13 RJK0629DPK-15 |
60V, 85A, 4.5m max.N Channel Power MOS FET High-Speed Switching Use
60V, 85A, 4.5m?max. N Channel Power MOS FET High-Speed Switching Use
|
Renesas Electronics Corporation
|
| MSN7002 MSN7002-SOT23 |
60V(D-S) N-Channel Enhancement Mode Power MOS FET
60V(D-S) N-Channel Enhancement Mode Power MOS FET
|
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|
| HRP80N06K |
60V N-Channel Trench MOSFET
|
SemiHow Co.,Ltd.
|
| 2SK1297 |
V(dss): 60V; I(d): 40A; 100W; silicon N-channel MOS FET. For high speed power switching
|
Hitachi Semiconductor
|
| UPA1724 UPA1724G PA1724 UPA1724G-E1 UPA1724G-E2 |
N-channel enhancement type power MOS FET
MOS Field Effect Transistor
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
10 A, 20 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET
|
NEC[NEC]
|
| MDD1951RH |
Single N-Channel Trench MOSFET 60V, 17.9A, 45.0m(ohm)
|
MagnaChip Semiconductor...
|
